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IRHNJ7230

Data Sheet
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IRHNJ7230
IRHNJ7230
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1C
  • Generation
    R4
  • ID (@100°C) max
    6 A
  • ID (@25°C) max
    9.4 A
  • Optional TID Rating (kRad(si))
    100 300 500
  • Package
    SMD-0.5
  • Polarity
    N
  • QG
    50 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    400 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.4 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The rad hard N-channel MOSFET IRHNJ7230 is ideal for space applications with its 200V and 9.4A rating. It has low RDS(on) and gate charge, which reduces power losses in switching applications. With electrical performance up to 100krad(Si) TID classification, this MOSFET ensures reliability in harsh environments.

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