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IRHNA7460SESCS

Data Sheet
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IRHNA7460SESCS
IRHNA7460SESCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R4
  • ID (@100°C) max
    12 A
  • ID (@25°C) max
    20 A
  • Optional TID Rating (kRad(si))
    100
  • Package
    SMD-2
  • Polarity
    N
  • QG
    220 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    320 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    500 V
  • VF max
    1.8 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The R4 N-channel MOSFET is a single, rad hard, 500V, 12A device with electrical performance up to 100krad(Si) TID. IRHNA7460SESCS comes in a SMD-2 package and uses rad hard HEXFET technology, making it perfect for high-performance power MOSFETs in space applications. Low RDS(on) and gate charge reduce power losses in switching applications, such as DC-DC converters and motor control. Its QIRL space-grade rating ensures quality and reliability.

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