IRHNA6S7264

Data Sheet

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IRHNA6S7264
IRHNA6S7264
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    31.5 A
  • ID (@25°C) max
    50 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-2
  • Polarity
    N
  • QG
    220 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    40 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNA6S7264 R6 SMD-2 N-channel MOSFET is a rad hard, 250V, 31.5A COTS device with up to 100krad(Si) TID and LET of 90 MeV·cm2/mg. Its low RDS(on) and gate charge minimize power losses in DC-DC converters and motor controllers while maintaining MOSFET advantages like voltage control, fast switching and temperature stability.

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