IRHMS6S7160

Data Sheet

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IRHMS6S7160
IRHMS6S7160
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    45 A
  • ID (@25°C) max
    45 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • QG
    170 C
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    11 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHMS6S7160 R6 N-channel MOSFET is a rad hard MOSFET for space applications, featuring 100V and 45A. With low RDS(on) and low gate charge, it reduces power losses in switching applications. It's characterized for Total Dose and Single Event Effect up to LET of 90 MeV·cm2/mg. This MOSFET retains all advantages of MOSFETs including voltage control, fast switching, and temperature stability, and is COTS rated.

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