IRF8915

20V Dual N-Channel Power MOSFET in a SO-8 package
Data Sheet

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IRF8915
IRF8915
Data Sheet

Product details

  • ID (@25°C) max
    8.9 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    N+N, N+N
  • Ptot (@ TA=25°C) max
    2 W
  • Qgd (typ)
    1.7 nC
  • QG (typ @4.5V)
    4.9 nC
  • RDS (on) (@10V) max
    18.3 mΩ
  • RDS (on) (@4.5V) max
    27 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    150 °C
  • VDS max
    20 V
  • VGS(th)
    2.1 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Features

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Industry standard surface-mount package
  • Silicon optimized for applications switching below <100kHz

Benefits

  • Wide availability from distribution partners
  • Industry standard qualification level
  • Standard pinout allows for drop-in replacement
  • High performance in low frequency applications

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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