IRF7807Z

30V Single N-Channel HEXFET Power MOSFET in a SO-8 Package
Data Sheet

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IRF7807Z
IRF7807Z
Data Sheet

Product details

  • Budgetary Price €/1k
    0.24
  • ID (@25°C) max
    11 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    SO-8
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    2.5 W
  • Qgd
    2.7 nC
  • QG (typ @4.5V)
    7.2 nC
  • RDS (on) (@10V) max
    13.8 mΩ
  • RDS (on) (@4.5V) max
    18.2 mΩ
  • RthJA max
    50 K/W
  • Tj max
    150 °C
  • VDS max
    30 V
  • VGS(th)
    1.8 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Industry-leading quality
  • Low RDS(ON) at 4.5V VGS
  • Fully Characterized Avalanche Voltage and Current
  • Ultra-Low Gate Impedance

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