IRF7101

20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Data Sheet

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IRF7101
IRF7101
Data Sheet

Product details

  • ID (@25°C) max
    3.5 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    N+N, N+N
  • Ptot (@ TA=25°C) max
    2 W
  • Qgd (typ)
    2.4 nC
  • QG (typ @4.5V)
    10 nC
  • RDS (on) (@4.5V) max
    150 mΩ
  • RDS (on) (@10V) max
    100 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    150 °C
  • VDS max
    20 V
  • VGS(th) range
    1 V to 3 V
  • VGS(th)
    2 V
  • VGS max
    12 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }