IRF7101

IRF7101

20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

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IRF7101
IRF7101


Product details

  • ID (@25°C) max
    3.5 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    N+N, N+N
  • Ptot (@ TA=25°C) max
    2 W
  • Qgd (typ)
    2.4 nC
  • QG (typ @4.5V)
    10 nC
  • RDS (on) (@4.5V) max
    150 mΩ
  • RDS (on) (@10V) max
    100 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    150 °C
  • VDS max
    20 V
  • VGS(th) range
    1 V to 3 V
  • VGS(th)
    2 V
  • VGS max
    12 V

OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant

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