IG1C052N10RCDV
Active and preferred
RoHS Compliant

IG1C052N10RCDV

Rad hard, 100 V, 52 A, GaN transistor bare die
Data Sheet

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IG1C052N10RCDV
IG1C052N10RCDV
Data Sheet

Product details

  • ESD Class
    Class 1C
  • Generation
    Gen 1
  • ID (@25°C) max
    52 A
  • Optional TID Rating (kRad(si))
    500
  • Package
    Die
  • Polarity
    N
  • QG
    13 nC
  • Qualification
    Visual inspection
  • RDS (on) (@25°C) max
    6 mΩ
  • TID max
    500 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    3.9 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IR HiRel rad hard GaN transistor technology provides high performance power devices for space applications. These devices have been characterized for both Total Ionizing Dose (TID) and Single Event Effects (SEE). This device, IG1C052N10RCDV, is in a bare die package and has a 100% visual inspection only screening level.

Features

  • Single event effect (SEE) hardened
  • Ultra low RDS(on)
  • Low total gate charge
  • Zero reverse recovery charge
  • Hermetically sealed ceramic package
  • Surface mount
  • Light weight
  • Bare die
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