Active and preferred
RoHS Compliant
Lead-free

FM28V100-TG

Data Sheet
package
ea.
in stock

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FM28V100-TG
FM28V100-TG
ea.
Data Sheet

Product details

  • Density
    1 MBit
  • Family
    Parallel FRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Operating Voltage range
    2 V to 3.6 V
  • Organization (X x Y)
    128Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    60 ns
Recommended
OPN
FM28V100-TG
Product Status active and preferred
Infineon Package
PG-TSOP-32
Package Name STSOP-32 (001-91156)
Packing Size 468
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-32
Package Name STSOP-32 (001-91156)
Packing Size 468
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM28V100-TG is a 1-Mbit (128K × 8) parallel F-RAM memory with 100 trillion read/write cycles and 151-year data retention at 65°C. Operating from 2.0 V to 3.6 V, it features 7 mA typical active current and 90 μA standby. With 60-ns access time, 90-ns cycle time, and SRAM compatibility, it replaces battery-backed SRAM modules. The 32-pin TSOP I package is RoHS compliant and supports -40°C to +85°C industrial temperature, ideal for frequent-write nonvolatile memory use.

Features

  • 1-Mbit nonvolatile F-RAM, 128K × 8
  • 100 trillion (10¹⁴) read/write endurance
  • 151-year data retention at 65°C
  • NoDelay™ writes, SRAM-like operation
  • Page mode operation, 30 ns cycle time
  • 60-ns access time, 90-ns cycle time
  • Industry-standard 128K × 8 SRAM pinout
  • Low power: 7 mA active, 90 μA standby
  • Low-voltage operation: 2.0 V to 3.6 V
  • Superior for moisture, shock, vibration
  • True surface mount solution
  • Advanced ferroelectric process

Benefits

  • Eliminates battery-backed SRAM concerns
  • Reliable data storage for over 150 years
  • Fast writes, no delay after write cycles
  • Drop-in replacement for standard SRAM
  • Withstands harsh environments
  • Reduces power consumption in systems
  • No rework steps for mounting
  • High endurance for frequent data logging
  • Compatible with existing SRAM designs
  • Maintains data after power loss
  • Simplifies system design, no battery needed
  • Consistent performance over wide voltage

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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