Active and preferred
RoHS Compliant

FM22L16-55-TGTR

Data Sheet
package
ea.
in stock

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FM22L16-55-TGTR
FM22L16-55-TGTR
ea.
Data Sheet

Product details

  • Density
    4 MBit
  • Family
    Parallel FRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.7 V to 3.6 V
  • Operating Voltage (VCCQ) range
    2.7 V to 3.6 V
  • Organization (X x Y)
    256Kb x 16
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    55 ns
Recommended
OPN
FM22L16-55-TGTR
Product Status active and preferred
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM22L16-55-TGTR is a 4-Mbit (256K × 16) nonvolatile ferroelectric RAM (F-RAM) in a 44-pin TSOP II package with 55 ns access time and SRAM compatibility. It operates from 2.7 V to 3.6 V across –40°C to +85°C, with typical active current of 8 mA and standby current of 90 μA. Endurance of 100 trillion read/write cycles and up to 151 years data retention at 65°C eliminate battery-backed SRAM concerns.

Features

  • 4-Mbit F-RAM, 256K x 16 organization
  • 100 trillion (1e14) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ writes, SRAM-compatible timing
  • 55 ns access time, 110 ns cycle time
  • Page mode operation, 25 ns page access
  • Software-programmable block write protect
  • Low power: 8 mA active, 90 μA standby
  • Sleep mode current 5 μA max
  • Low voltage operation: 2.7 V to 3.6 V
  • Input/output leakage ±1 μA max
  • Industrial temp: –40°C to +85°C

Benefits

  • Enables instant, reliable data storage
  • Eliminates battery backup maintenance
  • 151-year retention ensures long-term data
  • High endurance for frequent write cycles
  • Drop-in replacement for standard SRAM
  • Fast access boosts system performance
  • Page mode increases data throughput
  • Flexible software-controlled protection
  • Minimizes power usage in active/standby
  • Sleep mode extends battery life
  • Operates in low voltage systems
  • Reliable in harsh industrial environments

Documents

Documents

Design resources

Partner solutions

Developer community

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