CY7C1051H30-10BVXIT
Active and preferred
RoHS Compliant
Lead-free

CY7C1051H30-10BVXIT

Datasheet
package

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CY7C1051H30-10BVXIT
CY7C1051H30-10BVXIT
Datasheet

Product details

  • Alarms
    N
  • Density
    8 MBit
  • Family
    FAST SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.2 V to 3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    512K x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Real Time Clock
    N
  • Speed
    10 ns
  • Watchdog Timer
    N
Recommended
OPN
CY7C1051H30-10BVXIT
Product Status active and preferred
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY7C1051H30-10BVXIT is an 8-Mbit (512K × 16) asynchronous CMOS SRAM with embedded ECC for single-bit error correction (no automatic write-back). It operates from 2.2 V to 3.6 V over −40°C to +85°C and provides 10 ns access time. It uses a single CE and supports byte reads/writes via BLE/BHE with OE and WE controls. Typical ICC is 90 mA at 100 MHz, and CMOS standby (ISB2) is 20 mA (typ).

Features

  • 8-Mbit (512K x16) SRAM array
  • Embedded ECC single-bit correction
  • 10 ns address access (tAA)
  • 10 ns read/write cycle (tRC/tWC)
  • 2.2 V to 3.6 V VCC operation
  • 90 mA typ ICC at 100 MHz
  • 20 mA typ ISB2 standby current
  • 1.0 V data retention mode
  • TTL-compatible I/O levels
  • Byte write enables (BHE, BLE)
  • Outputs go high-Z when deselected
  • Ambient temp -40°C to +85°C

Benefits

  • Fits 16-bit buses, less glue logic
  • ECC corrects single-bit data errors
  • 10 ns access cuts CPU wait states
  • 10 ns cycles support fast SRAM ops
  • 2.2–3.6 V works with mixed rails
  • 90 mA typ reduces active power
  • Standby current cuts idle power
  • 1.0 V retention saves backup power
  • TTL levels ease legacy interfacing
  • Byte writes reduce write bandwidth
  • High-Z outputs simplify bus sharing
  • -40°C to +85°C boosts reliability

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