CY62167EV30LL-45BVXI
Active and preferred
RoHS Compliant
Lead-free

CY62167EV30LL-45BVXI

High-Density 16MBit MoBL™ Parallel SRAM | Sn/Ag/Cu Finish - Ideal for Industrial Applications, Wide Operating Range
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62167EV30LL-45BVXI
CY62167EV30LL-45BVXI
ea.

Product details

  • Density
    16 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    1M x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
OPN
CY62167EV30LL-45BVXI
Product Status active and preferred
Infineon Package
Package Name VFBGA-48 (51-85150)
Packing Size 4800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name VFBGA-48 (51-85150)
Packing Size 4800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY62167EV30LL-45BVXI is a 16-Mbit CMOS SRAM (1M × 16 or 2M × 8) in a Pb-free 48-ball VFBGA package. It operates from 2.2 V to 3.6 V over -40°C to +85°C with a 45 ns access time. I/O leakage is ±1 µA max and input/output capacitance is 10 pF max. Active ICC is 7 mA typ at 1 MHz and 35 mA max at fmax, and automatic power-down reduces standby to 1.5 µA typ (12 µA max) when deselected.

Features

  • 16-Mbit SRAM: 1M×16 or 2M×8
  • 45 ns read/write cycle time
  • OE access time 22 ns max
  • 2.2 V to 3.6 V single-supply
  • Auto power-down on deselect
  • Active current 7 mA typ at 1 MHz
  • Standby current 1.5 µA typ
  • Max standby current 12 µA
  • Data retention at VCC down to 1.5 V
  • Data retention current 10 µA max
  • 10 pF max input/output capacitance
  • Tri-state outputs via OE/CE/BHE/BLE

Benefits

  • Fits x16 or x8 bus architectures
  • 45 ns timing supports fast CPUs
  • 22 ns OE cuts read access delay
  • 2.2-3.6 V works with 3 V rails
  • Auto power-down saves energy
  • 7 mA typ reduces active power
  • 1.5 µA standby extends battery life
  • 12 µA max eases power budgeting
  • 1.5 V retention keeps data in sleep
  • 10 µA max enables long backup
  • 10 pF loads simplify signal timing
  • Tri-state I/O eases bus sharing
Documents

Design resources

Developer community