Active and preferred
RoHS Compliant
Lead-free

CY15E016J-SXET

Data Sheet
package

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CY15E016J-SXET
CY15E016J-SXET
Data Sheet

Product details

  • Density
    16 kBit
  • Frequency
    3.4 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) range
    4.5 V to 5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    2Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(E)
  • Speed
    0 ns
Recommended
OPN
CY15E016J-SXET
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY15E016J-SXET is a 16-Kbit (2K × 8) automotive-grade serial F-RAM with I2C interface, providing high-endurance nonvolatile memory for demanding applications. It supports 10 trillion (10¹³) read/write cycles and 121-year data retention at 85°C, with no write delays and low power consumption. Operating from 4.5 V to 5.5 V and -40°C to +125°C, it is AEC-Q100 Grade 1 qualified and RoHS compliant, making it ideal for reliable, high-speed data storage in harsh environments.

Features

  • 16-Kbit nonvolatile F-RAM, 2K × 8
  • 10 trillion (10¹³) read/write endurance
  • 121-year data retention at 85°C
  • NoDelay™ writes, immediate data storage
  • I2C interface up to 1 MHz
  • Supports 100 kHz, 400 kHz legacy timings
  • Low active current: 250 μA at 100 kHz
  • Low standby current: 40 μA (typ)
  • Wide VDD: 4.5 V to 5.5 V
  • Operating temp: –40°C to +125°C
  • High ESD: 2 kV HBM, 500 V CDM
  • Latch-up current >140 mA

Benefits

  • Unlimited endurance for frequent data logging
  • Reliable retention for 121 years at 85°C
  • Instant writes eliminate wait times
  • Drop-in replacement for I2C EEPROM
  • Low power reduces system energy use
  • Wide voltage range supports varied designs
  • Operates in harsh automotive environments
  • High ESD/latch-up improves robustness
  • No data polling or write delays
  • Supports legacy and new I2C systems
  • Suitable for industrial and automotive use
  • Fewer failures from write cycle limits

Documents

Documents

Design resources

Partner solutions

Developer community

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