not for new design
RoHS Compliant
Lead-free

BAT24-02ELS

Data Sheet
package

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BAT24-02ELS
BAT24-02ELS
Data Sheet

Product details

  • C @VR=0V
    0.2 pF
  • Configuration
    Single
  • IF max
    110 mA
  • VF
    0.25 V
  • VR max
    4 V
OPN
BAT2402ELSE6327XTSA1
Product Status not for new design
Infineon Package
TSSLP-2-3
Package Name N/A
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status not for new design
Infineon Package
TSSLP-2-3
Package Name -
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
This Infineon RF Schottky Diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02ELS a suitable choice for mixer and detector functions in applications with frequencies are as high as 24 GHz.

Features

  • Low inductanve LS = 0.2 nH (typical)
  • Low capacitance C = 0.2 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz
  • TSSLP-2-3 package (0.62 mm x 0.32 mmx 0.31 mm) with a 0201 footprint
  • Pb-free,  RoHS compliant and halogen free

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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