not for new design
RoHS Compliant
Lead-free

2EDS8265H

Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing
ea.
in stock

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2EDS8265H
2EDS8265H
ea.

Product details

  • Budgetary Price €/1k
    1.63, 1.63
  • Channels
    2
  • Configuration
    High-side and low-side, High-side, Half Bridge
  • Input Vcc
    3 V to 3.3 V
  • Input-side supply
    20 V
  • Isolation Type
    Galvanic isolation - Reinforced
  • Output Current (Sink)
    8 A
  • Output Current (Source)
    4 A
  • Package
    WB-DSO-16
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    37 ns
  • Turn On Propagation Delay
    37 ns
  • VBS UVLO (On)
    8 V
  • VCC UVLO (On)
    2.85 V
  • Voltage Class
    650 V
OPN
2EDS8265HXUMA2
Product Status not for new design
Infineon Package
Package Name N/A
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status not for new design
Infineon Package
Package Name -
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The EiceDRIVER™ 2EDS8265H is a reinforced isolated gate driverfor secondary-side control over the mandatory safe isolation barrier in SMPS. The strong 4A/8A source/sink gate driver features a high 150V/ns CMTI for robust operation with fast CoolMOS™ and high power switching noise environment.The short propagation delay of 37ns is provided with low variation over temperature, enabling the power system design to achieve higher efficiency.

Features

  • Fast switching with accurate timing
  • Optimized for area and system BOM
  • Robust against switching noise
  • Output- to-output channel isolation
  • Input-to-output channel isolation

Benefits

  • Efficiency gain and lower losses
  • Improved thermal behavior at smaller form factor
  • Protection and safe operation
  • Flexible configurations
  • Regulatory safety

System values

  • Enabling higher system efficiency and higher power density designs
  • Improving long term competitive cost position, integration and mass manufacturability
  • Extending end-product lifetime by improving safe operation of power switches in normal and abnormal field (grid) conditions
  • Lower EMI by ground isolation, driver proximity to MOSFETs or when using 4-pin Kelvin source MOSFETs
  • Simplified safety approval through component (VDE884-x, UL1577 and system (IEC60950, IEC62368) certificates

Diagrams

Pinconfiguration_2eds
Pinconfiguration_2eds
Pinconfiguration_2eds Pinconfiguration_2eds Pinconfiguration_2eds
ApplicationDiagram_2eds ApplicationDiagram_2eds ApplicationDiagram_2eds

Documents

Design resources

Developer community

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