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RoHS Compliant

2EDL901G3

EiceDRIVER™ 120 V Level shifter gate driver IC that is designed to drive dual high-side, dual low-side or half-bridge configurations of MV GaN HEMT
Data Sheet

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2EDL901G3
2EDL901G3
Data Sheet

Product details

  • Channels
    2
  • Input Vcc range
    3.8 V to 13.2 V
  • Output Current max
    1.6 A
  • Output Voltage range
    0 V to 5.5 V
  • Qualification
    Industrial
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
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The EiceDRIVER™ 2EDL901G3 is a dual-channel level shifter gate driver IC with dual floating outputs to drive MV GaN HEMT. This strong 1.6 A/6 A source/sink current dual-channel gate driver has an integrated current sense amplifier. It also has a programmable deadtime and mode of operations such as tri-state single PWM mode, HSCC HS mode, HSCC LS mode, Hi/Li inverted mode, and Hi/Li mode. It is available in 16 pins 3x3 mm package.

Features

  • Dual-channel floating output gate driver
  • Strong 1.6 A source and 6 A sink current
  • Configurable deadtime or turn-on delay
  • Integrated current sense amplifier
  • Configurable mode of operations
  • 4 V - 13.2 V Supply on each output channel
  • 5 V Gate clamp on both output driving voltage

Benefits

  • Support wide range of power topologies
  • Compact and thermally capable solution
  • Suitable for high power applications
  • Flexible for many customer requirements

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