BFP843F
Overview
The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT).
Summary of Features
- Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness
- High transition frequency fT = 60 GHz to enable best in class noise figure: NFmin = 1.1 dB at 5.5 GHz, 1.8 V, 8 mA
- High gain Gms = 18 dB at 5.5 GHz, 1.8 V, 15 mA
- OIP3 = 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA
- Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
- Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor)
Potential Applications
- Wireless communications: WLAN, WiMAX and Bluetooth
- Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo)
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