6ED2231S12T
EiceDRIVER™ 1200 V three-phase gate driver with typical 0.35 A source and 0.65 A sink currents in DSO-24 lead package for IGBT (Insulated Gate Biploar Transistor) / SiC(Silicon Carbide) Module and discretes.
By utilizing our 1200 V thin-film silicon-on-insulator (SOI) technology, 6ED2231S12T provides unique, measureable advantages including three low-ohmic integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes.
6ED2231S12T is a high voltage, high speed IGBT gate driver with three independent high side and low side referenced output channels for three phase applications. 6ED2231S12T integrates protective features such as over-current protection with fast, and accurate fault reporting (+/-5%), shoot-through protection, and more tighten under-voltage lockout (UVLO) protection integrated in a DSO-24 package. The DSO-24 package (DSO-28 with 4-pins removed) provides the best trade-off between small IC package and clearance distances.
The 6ED2231S12T is well suited for low- power designs up to 6 kW or higher power levels with additional external buffer current driver. When combined with Infineon IGBT/SiC modules such as EasyPACK 1B™ or EasyPACK 2B™, designs achieve the best balance between performance, small-form factor, and cost. This is clearly demonstrated with EVAL-6ED2231S12TM1.
6ED2231S12T belongs to the 1200V Level Shift gate driver family.
Zusammenfassung der Merkmale
- 1200-V Thin-Film-SOI technology
- Integrated Ultra-fast Bootstrap Diode
- Tolerant to negative transient voltage up to -100 V (Pulse width is up 700 ns) given by SOI-technology
- Output source/sink current capability +0.35 A/-0.65 A
- Over current protection (ITRIP +/- 5% reference)
- Integrated 460 ns dead-time protection
- Shoot-through (cross-conduction) protection
- Integrated input filter for noise immunity
- Independent Under-voltage lockout for VCC and VBS with tighten UVLO level
- Fault reporting, automatic Fault clear and Enable function on the same pin (RFE)
- Matched propagation delay for all channels
- 3.3 V, 5 V, and 15 V input logic compatible
- DSO-24 package (DSO-28 with 4 pins removed for high clearance)
Vorteile
- 3 Phase gate drive with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design
- Optimized gate driver solution with design flexibility for IGBT/SiC based PIM, discrete switch
- 100 V negative VS increased reliability / robustness
- 50% lower level shift losses leads lower temperature operation and higher reliability
- Latch-up immune increased reliability
- Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches
- Under-voltage lockout provides protection at low supply voltage
- The DSO-24 package (DSO-28 with 4-pins removed) provides the best trade-off between small IC package and clearance distances
| Part No | Package | Configuration | Io+/- (typ.) | UVLO (on/off) typ. |
|---|---|---|---|---|
| DSO-24 |
Three-phase |
0.35 / 0.65 A |
11.3 / 12.2 V | |
| SSOP-24 |
Half-bridge |
2 / 3 A |
9.3 / 10.2 V | |
| DSO-24 |
Three-phase |
0.35 / 0.65 A |
9.4 /10.4 V | |
| DSO-28 |
Three-phase |
0.25 / 0.5 A |
8.2 / 8.6 V | |
| DSO-16 |
High- and low-side |
2.0 / 2.5 A |
9.3 /10.2 V |
