The CoolGaN™ Transistor G5 with integrated Schottky diode for mass market use is another industry first by Infineon. The small 3 x 5 mm package integrates our GaN transistor with a Schottky diode. With this new integrated solution, reverse conduction losses are lower, and compatibility with a wider range of high-side gate drivers and controllers results in a simpler design.

GaN Schottky Image
GaN Schottky Image
GaN Schottky Image
  • E-mode normally-off transistor
  • 3 x 5 mm PQFN package
  • High power capability
  • Reduces total component count
  • Increase ease-of-use circuit design
  • Lower BoM cost
  • Data center intermediate bus converters and synchronous rectification
  • Telecom power bricks and synchronous rectification
  • Motor drive
  • Renewable power systems
  • USB-C adapters and chargers