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OptiMOS™ 6 power MOSFET 100 V

OptiMOS™ 6 100 V

Setting the new industry standard for high switching frequency applications

OptiMOS™ 6 100 V MOSFET technology

Bring your design to the next level of efficiency

Compared to the well established OptiMOS™ 5 technology, Infineon’s leading thin wafer technology enables significant performance benefits:

R_DS(on) reduced by 18%
Improved FOM Q_g x R_DS(on) by 29% and improved FOM Q_gd x R_DS(on) by 42%
Wider Safe Operating Area (SOA)

Infineon’s OptiMOS™ 6 power MOSFET 100 V family is targeting applications such as switch mode power supply (SMPS) as well as solar, power tools, and battery management systems. The enhanced performances yield efficiency improvement, allowing easier thermal design and less paralleling, leading to system cost reduction.

Bring your design to the next level of efficiency

How to choose the right MOSFET

OptiMOS™ 6 100 V is the latest power MOSFET technology completing the Infineon industrial portfolio together with OptiMOS™ 5 and OptiMOS™ 3. These technologies are the perfect fit if you are looking for high performance applications, industry's best figure of merit and high efficiency and power density.

How to choose across the different OptiMOS™ technology generation?

OptiMOS™ 3 is the first generation of 100 V OptiMOS™ MOSFETs. It is recommended for designs allowing large trade-offs between R_DS(on) and switching performances.

On the other side OptiMOS™ 5 is considered the price/performance solution and is available in a broad range of packages including very innovative solutions for high power density (Source-Down PQFN 3.3x3.3) or high current capability (TOLx family).

Finally, OptiMOS™ 6 adds to the portfolio a broader choice of R_DS(on) ranges with improved figure of merits for lower switching losses and higher power density. The broad portfolio of OptiMOS™ 6 gives the possibility to choose among best-in-class products as well as price/performance solutions.

How to choose among OptiMOS™ and StrongIRFET™?

StrongIRFET™ addresses a wide range of applications. This family is optimized for excellent price/performance, ease of use and broad availability at distribution partners. The main difference between OptiMOS™ and StrongIRFET™ is in the technology performance as well as in the reliability.

StrongIRFET ™ is qualified according to JEDEC for standard application. While the OptiMOS™ family is fully qualified according to JEDEC for industrial application and benefits special customer support such as additional post stress electrical test, extended product change notification window and customer specific requests.

Figure of merit: gate charge (Qg) and RDS(on)

Drain-source on-state resistance RDS(on)

R_DS(on) is one of the key parameters of a MOSFET and denotes the on-state resistance measured between drain and source terminals.

A lower R_DS(on) value yields:

Reduction in conduction losses
Less or avoided paralleling of parts, saving costs and PCB real estate

leading to increased power density!

OptiMOS™ 6 technology in 100 V achieves ~20% lower R_DS(on) comparing the best-in-class product ISC022N10NM6 to OptiMOS™ 5 (BSC027N10NS5) in SuperSO8 package.

The improvement in specific on-state resistance brought by OptiMOS™ 6 allows to move to a smaller package (PQFN 3.3x3.3) for the same R_DS(on) leading to higher power density.

Gate charge (Qg)

Total gate charge (Q_g) is the amount of charge that needs to be supplied to the gate to turn on (drive) the MOSFET, for some specified conditions. A small value of Q_g is highly desirable in high-switching frequency applications, since it directly impacts on the driving losses.

The gate-to-drain charge Q_gd represents the part of gate charge associated with the Miller plateau extension, required to complete the drain voltage transition. For the same driving circuit, a lower Q_gd means faster voltage transients, hence lower switching losses. This is of utmost importance in high-switching frequency, hard-switched SMPS, where switching losses play a significant role.

Focusing on devices with same R_DS(on) of 2.7 mOhm and in SuperSO8 package, the new OptiMOS™ 6 100 V, shows a reduction of 35% in total gate charge compared to OptiMOS™ 5 while at the same time, gate-to-drain charge, is 45% lower, with correspondent benefits in switching losses.

graph-gate-charge-characteristics-comparison-optimos-5-and-6-v01-00.jpg

Figure of merit (FOM)

The MOSFET “figure of merit” (FOM) is a performance indicator of a technology which accounts for both conduction and switching losses. FOM is calculated as on-resistance (R_DS(on)) times total gate charge (Q_g) and is usually expressed in mΩ x nC.

Why is the Figure of Merit an important parameter for technology evaluation?

R_DS(on) is a measure of the conduction losses while, on the other hand, total gate charge Q_g impacts on both the driving losses and part of switching losses. In order to minimize the total losses, both R_DS(on) and Q_g need to be minimized.

For every technology, the FOM = R_DS(on) x Q_g is a given number: it is not possible to improve R_DS(on) without impacting the charges, unless FOM is improved as well.

OptiMOS™ 6 100 V shows significant improvement up to 30% in FOM compared to OptiMOS™ 5 100 V. In other words, for the same R_DS(on), OptiMOS™ 6 100 V would show 30% lower Q_g compared to OptiMOS™ 5 100 V.

Similarly to the FOM, the gate-to-drain charge figure-of-merit FOM_gd is a performance indicator of a technology which takes in consideration both conduction and switching losses. FOM_gd is calculated as on-resistance (R_DS(on)) times gate-to-drain charge (Q_gd) and is usually expressed in mΩ x nC.

Why is the FOMgd an important parameter for technology evaluation?

R_DS(on) is a measure of the conduction losses while, gate-to-drain charge Q_gd impacts on switching losses (especially during turn-off). In order to minimize the total losses, both R_DS(on) and Q_gd need to be minimized.

OptiMOS™ 6 100 V shows significant improvement up to 42% in FOM_gd compared to OptiMOS™ 5 100 V. In other words, for the same R_DS(on), OptiMOS™ 6 100 V would show 42% lower Q_gd compared to OptiMOS™ 5 100 V.

OptiMOS™ 6 100 V Overview

Topologies & applications

infographic-overview-optimos-6--topologies-and-applications-v01-00.jpg

Application results

OptiMOS™ 6 100 V has been designed primarily to address high switching frequency applications such as switch mode power supply (e.g. telecom, server, charger, adapter, TV...).

Stay tuned for more information on motor control and solar applications to see all the advantages that this technology can bring!

Soft switching topology

Soft switching - efficiency & delta loss comparison

Soft switching happens when either the voltage or current is zero before the switch is turned on or off. This has benefits, like the reduction of total switching losses. Soft switching is usually a proprieties of resonant converters. In some cases, it would be possible to achieve soft-switching even in hard-switched PWM topologies: one approach is to introduce auxiliary circuits that enable soft switching for the control MOSFET, while recovering the energy otherwise lost and improving the efficiency.

A possible application is a ZVS inverting buck boost -(36...60) V to 12 V DC-DC converter. In this topology, an active clamp circuit recovers, in a lossless way, Q_rr from the SR switch towards the output, while achieving ZVS for the control switch.

Best-in-class products in the newly released OptiMOS™ 6 technology (ISC022N10NM6) are compared to OptiMOS™ 5 (BSC027N10NS5) in SuperSO8 (PQFN 5x6) package in this application. The result is stunning: OptiMOS™ 6 in 2.2 mΩ achieves roughly 1% better efficiency across all the line and load conditions, compared to the 2.7 mΩ product in OptiMOS™ 5.

The improvement in efficiency is explainable as the joint contribution of:

The lower driving losses, thanks to approximatively 20% lower (typ) Q_g
Lower turn-off losses due the lower Q_gd – an improvement just shy of 40%
Lower conduction losses with a 18% lower R_DS(on)

The improvement in efficiency lowers the total losses by 7 W, a very remarkable improvement allowing easier thermal management and increased power density. ISC022N10NM6 represents the lowest R_DS(on) available in the market for SuperSO8 (PQFN 5x6) package in 100 V.

Hard switching topology: telecom quarter brick intermediate bus converter

Hard switching occurs when there is an overlap between voltage and current when switching the transistor on and off.

V x I crossover losses are the main source of losses during turn-off, while Q_oss associated losses (due to the charge stored in the output capacitance) dominates the turn-on transient.

In high switching frequency SMPS, switching losses represent a substantial share of the total losses. Turn-off losses are reduced by lowering the gate-to-drain charge Q_gd, that would result in a faster voltage transition. Turn-on losses are minimized by a low value for the output charge Q_oss.

Efficiency comparison in isolated DC-DC primary side between OptiMOS 6™ (6 mΩ) and OptiMOS 5™ (5 mΩ)

OptiMOS™ 6 100 V, showing leading FOM_gd and FOM_oss figure of merits, enables remarkable efficiency improvement when compared to the previous available technology. In a telecom quarter brick 250 kHz, 600 W 48 Vin/12 Vout full bridge/full bridge, ISC060N10NM6 (6 mΩ) achieves up to +0.4% better efficiency and lower temperature compared to BSC050N10NS5 (5 mΩ). This benefits in higher system reliability as lower system cost.

Efficiency comparison in isolated DC-DC secondary side for 2.7 mΩ in SuperSO8 OptiMOS™ 6 and OptiMOS™ 5 100 V

Graphs showing comparison of OptiMOS™ 5 and OptiMOS™ 6 by efficiency and temperature

A 250 kHz, 600 W telecom quarter brick 48 Vin/12 Vout full bridge featuring center-tap rectifier was used to compare 2.7 mΩ 100 V SuperSO8 MOSFETs on the secondary side.

ISC027N10NM6 achieved 0.46% better efficiency compared to BSC027N10NS5 which results in about 3 W lower losses.

This directly translates in a dramatic temperature improvement with ~12°C difference at full load, which enables easier thermal designs and improved lifetime up to 75%*

* Estimated value. Reliability model considers GOX breakdown and HTGS drifts

Battery operated BLDC motor drive

Switching losses in a hard switching converter represent a large share of the total losses in BLDC Motor inverters. For this reason, a good trade-off between R_DS(on) and charges Q_g and Q_gd is needed.

An efficiency comparison between OptiMOS™ 5 (BSC027N10NS5, R_DS(on) = 2.7 mΩ) and OptiMOS™ 6 (ISC022N10NM6, R_DS(on) = 2.2 mΩ) demonstrated that in this application where conduction losses play a significant role, OptiMOS™ 6 (ISC022N10NM6) was able to achieve better efficiency than OptiMOS™ 5 (BSC027N10NS5) due to lower switching losses and R_DS(on). Furthermore, due to the lower turn-off switching losses, the new product produces 10°C lower case temperature at full load compared to the OptiMOS™ 5 version.

These OptiMOS™ 6 power MOSFETs in SuperSO8 package are suitable for battery operated applications requiring efficiency optimization such as power tools, gardening tools, robots and drones.

Solar energy systems

Efficiency comparison between OptiMOS™ 6 and OptiMOS™ 5

Switching losses in a hard switching converter represent a large share of the total losses in solar power optimizers. For this reason, a good balance between R_DS(on) and charges is needed. Recommended products for a power optimizer (synchronous buck stage) are 100 V power MOSFETs in SuperSO8 package, with R_DS(on) in the range of 5-6 mΩ.

A efficiency comparison between OptiMOS™ 5 (BSC050N10NS5, R_DS(on) = 5 mΩ) and OptiMOS™ 6 (ISC060N10NM6, R_DS(on) = 6 mΩ) demonstrated that even with 18 percent higher R_DS(on), OptiMOS™ 6 (ISC060N10NM6) achieved better efficiency than OptiMOS™ 5, due to lower switching losses. Furthermore, due to the lower turn-off switching losses, the new product produces 6°C lower case temperature at full load compared to the OptiMOS™ 5 version.

OptiMOS™ 6 100 V is currently available in SuperSO8 and PQFN 3.3x3.3 packages:

Datasheets

Download datasheets from the product table

Videos

Introduction to OptiMOS™ 6 – 100 V technology improvement

Get an introduction on the OptiMOS™ 6 – 100 V improvements in key performance parameters such as R_DS(on), Q_g, Q_gd and Safe Operating Area (SOA) compared to the state of the art OptiMOS™ 5 technology.

OptiMOS™ 6 – 100 V in soft switching SMPS

This video will show the efficiency and thermal comparison of OptiMOS™ 6 vs. OptiMOS™ 5 in a ZVS inverting buck boost DC/DC converter.

OptiMOS™ 6 – 100 V in hard switching SMPS

This video will provide an overview of the efficiency and thermal behavior of OptiMOS™ 6 vs. OptiMOS™ 5 in a telecom quarter brick intermediate bus converter.

OptiMOS™ 6 100 V: Setting the new industry standard

Infineon introduces OptiMOS™ 6 100 V, the new performance MOSFET that enables lower conduction losses and increased power density for the highest performance in the application, meeting contemporary application requirements.

Trainings & webinar

Webinar - OptiMOS™ 6 100 V power MOSFETs performance overview and use cases

This OptiMOS™ 6 100 V power MOSFET webinar provides an overview of the improved performances and the use case applications that can benefit from this technology such as telecom, solar, and battery powered applications.

Watch now and learn how your applications can benefit from this technology.

Key takeaways:

Discover the performance of OptiMOS™ 6 100 V MOSFET technology
Get to know target applications and use case examples in telecom, solar and battery powered applications
Gain a product portfolio overview
Learn about key product features and benefits

Is OptiMOS™ 6 the right product for you?

OptiMOS™ or StrongIRFET™? This is the dilemma!
In most cases we are asking ourselves which one is the best fitting technology for our design.
But how can we make this choice?

Key takeaway:

Get to know the power discretes portfolio and understand which technology is the best fit for the design

Bring your high switching frequency application to next level with OptiMOS™ 6 100 V

In this video, we will cover the OptiMOS™ 6 100 V through the lens of the telecom/SMPS application.

Key takeaway:

Understand how OptiMOS™ 6 100 V can bring your SMPS design to next level

How to choose the right MOSFET

How to choose across the different OptiMOS™ technology generation?

OptiMOS™ 3 is the first generation of 100 V OptiMOS™ MOSFETs. It is recommended for designs allowing large trade-offs between R_DS(on) and switching performances.

How to choose among OptiMOS™ and StrongIRFET™?

Figure of merit: gate charge (Qg) and RDS(on)

Drain-source on-state resistance RDS(on)

R_DS(on) is one of the key parameters of a MOSFET and denotes the on-state resistance measured between drain and source terminals.

A lower R_DS(on) value yields:

Reduction in conduction losses
Less or avoided paralleling of parts, saving costs and PCB real estate

leading to increased power density!

OptiMOS™ 6 technology in 100 V achieves ~20% lower R_DS(on) comparing the best-in-class product ISC022N10NM6 to OptiMOS™ 5 (BSC027N10NS5) in SuperSO8 package.

The improvement in specific on-state resistance brought by OptiMOS™ 6 allows to move to a smaller package (PQFN 3.3x3.3) for the same R_DS(on) leading to higher power density.

Gate charge (Qg)

Figure of merit (FOM)

For every technology, the FOM = R_DS(on) x Q_g is a given number: it is not possible to improve R_DS(on) without impacting the charges, unless FOM is improved as well.

Why is the FOMgd an important parameter for technology evaluation?

Application results

OptiMOS™ 6 100 V has been designed primarily to address high switching frequency applications such as switch mode power supply (e.g. telecom, server, charger, adapter, TV...).

Stay tuned for more information on motor control and solar applications to see all the advantages that this technology can bring!

Soft switching topology

Soft switching - efficiency & delta loss comparison

The improvement in efficiency is explainable as the joint contribution of:

The lower driving losses, thanks to approximatively 20% lower (typ) Q_g
Lower turn-off losses due the lower Q_gd – an improvement just shy of 40%
Lower conduction losses with a 18% lower R_DS(on)

Hard switching topology: telecom quarter brick intermediate bus converter

Hard switching occurs when there is an overlap between voltage and current when switching the transistor on and off.

V x I crossover losses are the main source of losses during turn-off, while Q_oss associated losses (due to the charge stored in the output capacitance) dominates the turn-on transient.

Efficiency comparison in isolated DC-DC primary side between OptiMOS 6™ (6 mΩ) and OptiMOS 5™ (5 mΩ)

Efficiency comparison in isolated DC-DC secondary side for 2.7 mΩ in SuperSO8 OptiMOS™ 6 and OptiMOS™ 5 100 V

A 250 kHz, 600 W telecom quarter brick 48 Vin/12 Vout full bridge featuring center-tap rectifier was used to compare 2.7 mΩ 100 V SuperSO8 MOSFETs on the secondary side.

ISC027N10NM6 achieved 0.46% better efficiency compared to BSC027N10NS5 which results in about 3 W lower losses.

This directly translates in a dramatic temperature improvement with ~12°C difference at full load, which enables easier thermal designs and improved lifetime up to 75%*

* Estimated value. Reliability model considers GOX breakdown and HTGS drifts

Discover the performance of OptiMOS™ 6 100 V MOSFET technology
Get to know target applications and use case examples in telecom, solar and battery powered applications
Gain a product portfolio overview
Learn about key product features and benefits

Is OptiMOS™ 6 the right product for you?

OptiMOS™ or StrongIRFET™? This is the dilemma!
In most cases we are asking ourselves which one is the best fitting technology for our design.
But how can we make this choice?

Key takeaway:

Get to know the power discretes portfolio and understand which technology is the best fit for the design

Bring your high switching frequency application to next level with OptiMOS™ 6 100 V

In this video, we will cover the OptiMOS™ 6 100 V through the lens of the telecom/SMPS application.

Key takeaway:

Understand how OptiMOS™ 6 100 V can bring your SMPS design to next level

OptiMOS™ 6 100 V

Setting the new industry standard for high switching frequency applications

Bring your design to the next level of efficiency

Positioning

Performance overview

Target applications

Application results

Product portfolio

Downloads & videos

Documents

Documents

01Positioning

01Positioning

02Performance overview

02Performance overview

03Target applications

03Target applications

04Application results

04Application results

05Product portfolio

05Product portfolio

06Downloads & videos

06Downloads & videos

Documents

Documents