600 V CoolMOS™ S7/S7T

600 V CoolMOS™ S7/ S7T high-voltage superjunction MOS family delivers the best performance for low-frequency switching applications at the best price

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Overview

The S7 series is an ideal fit for applications where MOSFETs are switched at low frequency, such as active-bridge rectification, inverter stages, in-rush relays, PLCs, power-solid-state relays, and circuit breakers. The S7T series MOSFET equipped with a built-in temperature sensor. This integrated sensor helps improve the accuracy of junction temperature sensing in the solid state circuit breaker and solid-state relay (SSR) applications.

Key Features

  • Smallest RDS(on) in SMD packages
  • Optimized for conduction
  • Improved thermal resistance
  • High pulse current capacity
  • Highest body diode surge robustness

Products

About

600 V CoolMOS™ S7 high-voltage superjunction (SJ) MOSFETs

By focusing on applications where switching losses are not relevant, the CoolMOS™ S7 SJ MOSFET is stripped of the features related to switching performance and therefore has optimized cost positioning while reaching very low RDS(on) values.

The CoolMOS™ S7 MOSFET is built on a successful technical optimization of Infineon’s CoolMOS™ 7 technology that removes from the device redundant features related to switching performance as they are not needed in low-frequency switching applications.

Therefore, it is the ideal MOSFET for applications that require low conduction losses at the best price.

Additionally, delivering the best performance and keeping Infineon’s high-quality standards.

The CoolMOS™ S7T is a CoolMOS™ S7 integrated with a temperature sensor

The CoolMOS™ S7T product family is a new variant of the CoolMOS™ S7, introduced to address the solid-state solutions, such as solid state circuit breaker and solid-state relay (SSR) applications.

It has an integrated temperature sensor to improve the accuracy of junction temperature sensing. The integration of these features has a positive impact on the durability, safety, and efficiency of many electronic applications.

For the applications, it means enhanced performance and reliability due to the highly accurate, embedded sensor and its superior RDS(on). S7T is available in TOLL and Q-DPAK. See S7T available products in the product table above.

600 V CoolMOS™ S7 product portfolio

The 600 V S7 comprises advanced surface-mount packages (Q-DPAK BSC (HDSOP), Q-DPAK TSC (HDSOP), TO-Leadless (HSOF-8)) and through-hole (TO-220). The  RDS(on) range spans from 10 mΩ to 65 mΩ.

Streamlined design for best performance at low switching

S7 - Key features:

  • Best-in-class RDS(on) in SMD packages
  • Best superjunction MOSFET RDS(on)
  • Optimized for conduction performance
  • Improved thermal resistance
  • High pulse current capability
  • Body diode robustness at AC line commutation

S7 - Key benefits:

  • Minimized conduction losses
  • Increased energy efficiency
  • More compact and easier designs
  • Eliminated or reduced heat sinks in solid-state designs
  • Lower TCO cost or BOM cost
     

S7T - Key features:

  • Enhanced protection
  • High accuracy in temperature sensing and fast monitoring
  • Available in SMD top side cooled and bottom side cooled pacakges

S7T - Key benefits:

  • Reduction of external sensing elements
  • 40% more accurate than discrete sensor
  • 4x faster than discrete sensor solution
  • Optimal PCB space utilization
  • Enabling functional safety
Solid-state circuit breakers and relays

Infineon’s CoolMOS™ S7 SJ MOSFET makes it economically convenient to see superjunction technology as an effective way to replace electromechanical relays and circuit breakers or to improve existing solid-state designs. Compared to electromechanical devices, the S7 technology:

  • Switches faster
  • Does not have contact arcing, bouncing, or degradation of on-resistance over a lifetime
  • Ensures more system reliability and a considerably longer system lifetime
  • Is resistant to shock and vibration and is position-insensitive
  • Enables silent operations

The usage of Infineon’s S7 SJ MOSFET facilitates position- and vibration-insensitive solutions, increasing the ease of use as well as the reliability of the final system.

Cost-performance optimization for low-frequency switching applications

Compared to alternative silicon devices like SCRs, TRIACs, and high-voltage planar MOSFETs, the CoolMOS™ S7 device:

Increases system efficiency and density — allows the usage of smaller heat sinks (volume reduction 40% to 80%); enables a higher system current rating without changing the system form factor and environmental conditions; switches faster than TRIACs; and easy paralleling.

600 V CoolMOS™ S7 high-voltage superjunction (SJ) MOSFETs

By focusing on applications where switching losses are not relevant, the CoolMOS™ S7 SJ MOSFET is stripped of the features related to switching performance and therefore has optimized cost positioning while reaching very low RDS(on) values.

The CoolMOS™ S7 MOSFET is built on a successful technical optimization of Infineon’s CoolMOS™ 7 technology that removes from the device redundant features related to switching performance as they are not needed in low-frequency switching applications.

Therefore, it is the ideal MOSFET for applications that require low conduction losses at the best price.

Additionally, delivering the best performance and keeping Infineon’s high-quality standards.

The CoolMOS™ S7T is a CoolMOS™ S7 integrated with a temperature sensor

The CoolMOS™ S7T product family is a new variant of the CoolMOS™ S7, introduced to address the solid-state solutions, such as solid state circuit breaker and solid-state relay (SSR) applications.

It has an integrated temperature sensor to improve the accuracy of junction temperature sensing. The integration of these features has a positive impact on the durability, safety, and efficiency of many electronic applications.

For the applications, it means enhanced performance and reliability due to the highly accurate, embedded sensor and its superior RDS(on). S7T is available in TOLL and Q-DPAK. See S7T available products in the product table above.

600 V CoolMOS™ S7 product portfolio

The 600 V S7 comprises advanced surface-mount packages (Q-DPAK BSC (HDSOP), Q-DPAK TSC (HDSOP), TO-Leadless (HSOF-8)) and through-hole (TO-220). The  RDS(on) range spans from 10 mΩ to 65 mΩ.

Streamlined design for best performance at low switching

S7 - Key features:

  • Best-in-class RDS(on) in SMD packages
  • Best superjunction MOSFET RDS(on)
  • Optimized for conduction performance
  • Improved thermal resistance
  • High pulse current capability
  • Body diode robustness at AC line commutation

S7 - Key benefits:

  • Minimized conduction losses
  • Increased energy efficiency
  • More compact and easier designs
  • Eliminated or reduced heat sinks in solid-state designs
  • Lower TCO cost or BOM cost
     

S7T - Key features:

  • Enhanced protection
  • High accuracy in temperature sensing and fast monitoring
  • Available in SMD top side cooled and bottom side cooled pacakges

S7T - Key benefits:

  • Reduction of external sensing elements
  • 40% more accurate than discrete sensor
  • 4x faster than discrete sensor solution
  • Optimal PCB space utilization
  • Enabling functional safety

Solid-state circuit breakers and relays

Infineon’s CoolMOS™ S7 SJ MOSFET makes it economically convenient to see superjunction technology as an effective way to replace electromechanical relays and circuit breakers or to improve existing solid-state designs. Compared to electromechanical devices, the S7 technology:

  • Switches faster
  • Does not have contact arcing, bouncing, or degradation of on-resistance over a lifetime
  • Ensures more system reliability and a considerably longer system lifetime
  • Is resistant to shock and vibration and is position-insensitive
  • Enables silent operations

The usage of Infineon’s S7 SJ MOSFET facilitates position- and vibration-insensitive solutions, increasing the ease of use as well as the reliability of the final system.

Cost-performance optimization for low-frequency switching applications

Compared to alternative silicon devices like SCRs, TRIACs, and high-voltage planar MOSFETs, the CoolMOS™ S7 device:

Increases system efficiency and density — allows the usage of smaller heat sinks (volume reduction 40% to 80%); enables a higher system current rating without changing the system form factor and environmental conditions; switches faster than TRIACs; and easy paralleling.

Documents

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community ", "labelEn" : "Ask the community " }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions ", "labelEn" : "View all discussions " } ] }