CoolSiC™ Schottky diodes

Silicon carbide CoolSiC™ Schottky diode solutions - improve efficiency and solution costs

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About CoolSiC™ Schottky diodes

Infineon is the world’s first silicon carbide (SiC) discrete power supplier. Long market presence and experience enable us to deliver highly reliable, industry-leading SiC performance. The differences in material properties between silicon carbide and silicon limit the fabrication of practical silicon unipolar diodes (Schottky diodes) to a range up to 100 V–150 V, with a relatively high on-state resistance and leakage current. With SiC material, Schottky diodes can reach a much higher breakdown voltage. Infineon's portfolio of SiC products covers 600 V and 650 V to 1200 V Schottky diodes.

Key features

CoolSiC™ Schottky diodes incorporate important key features such as no reverse recovery charge, purely capacitive switching, and high operating temperature (T j, max 175°C). Further advantages are low turn-off losses, reduction of CoolMOS™ or IGBT turn-on loss, and switching losses that are independent from load current, switching speed, and temperature.

Key benefits and applications

Key benefits are, among other things, system efficiency improvement compared to Si diodes, reduced cooling requirements, enablement of higher frequency/increased power density, higher system reliability due to lower operating temperature, and reduced EMI.

CoolSiC™ Schottky diodes can be used in several applications such as motor controls and drives, server power supply, telecom power supply, solutions for photovoltaic energy systems, and online UPS.

About CoolSiC™ Schottky diodes

Infineon is the world’s first silicon carbide (SiC) discrete power supplier. Long market presence and experience enable us to deliver highly reliable, industry-leading SiC performance. The differences in material properties between silicon carbide and silicon limit the fabrication of practical silicon unipolar diodes (Schottky diodes) to a range up to 100 V–150 V, with a relatively high on-state resistance and leakage current. With SiC material, Schottky diodes can reach a much higher breakdown voltage. Infineon's portfolio of SiC products covers 600 V and 650 V to 1200 V Schottky diodes.

Key features

CoolSiC™ Schottky diodes incorporate important key features such as no reverse recovery charge, purely capacitive switching, and high operating temperature (T j, max 175°C). Further advantages are low turn-off losses, reduction of CoolMOS™ or IGBT turn-on loss, and switching losses that are independent from load current, switching speed, and temperature.

Key benefits and applications

Key benefits are, among other things, system efficiency improvement compared to Si diodes, reduced cooling requirements, enablement of higher frequency/increased power density, higher system reliability due to lower operating temperature, and reduced EMI.

CoolSiC™ Schottky diodes can be used in several applications such as motor controls and drives, server power supply, telecom power supply, solutions for photovoltaic energy systems, and online UPS.

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