The input signal levels of conventional non-isolated gate driver ICs are referenced to the ground potential of the gate driver IC. If the ground potential of the gate driver IC shifts excessively in the application, false triggering of the gate driver IC can occur. Infineon's single-channel non-isolated EiceDRIVER™ gate driver ICs with truly differential inputs help you overcome the ground-shift challenge in your design.

  • Configurable common-mode robustness
  • Separate low-impedance outputs
  • +10 ns/-7 ns propagation delay
  • 4 V/8 V UVLO options
  • 4 A/8 A source/sink current
  • Compact package

Products

About

The 1EDNx550 non-isolated gate driver ICs are available in small 6-pin SOT-23 and TSNP packages. Their truly differential inputs enable cost-effective solutions with exceptional power density. Unlike other gate driver ICs, the operation of the 1EDNx550-family is largely independent for the gate driver GND. Only the voltage difference between the two control inputs determines the status of the gate driver output. The 1EDNx550 family eliminates the risk of false triggering and is ideally suited for application designs prone to large GND shifts between the control IC and the gate driver IC, such as PFCs with Kelvin source MOSFETs.

1EDNx550x gate driver ICs have truly differential inputs. Their control signal inputs are largely independent from the ground potential. Only the voltage difference between its two input contacts determines its output being “on” or “off”. This prevents false triggering of power MOSFETs in a very elegant and robust way and thus eliminates electrical overstress (EOS) of the power MOSFETs. The products are available in a small 6-pin SOT package as well as in an ultrasmall TSNP package.

Gate driver ground shifts can be caused by the parasitic ground inductance between where the gate driver IC is placed and where the control IC resides. Applications, where the distance between these two ICs is relatively long, are prone to that. The need to use single- or dual-layer PCB material, as opposed to multi-layer PCBs, may be one root cause. Industrial design requirements or having the control IC on a daughter card can be another.

A second reason for the gate driver ground shift can be parasitic source inductances between the gate driver IC and the MOSFET driven by it. That’s particularly of relevance in hard-switching applications like PFCs and synchronous rectification stages.

The 1EDN family of truly diverse inputs can be used in a variety of applications, including boost PFCs with Kelvin source MOSFETs, interleaved PFCs, and full-bridge synchronous rectifiers. In addition, it can also be used for 48 V to 12 V intermediate bus converters, buck-boost converters, and half-bridges for low and medium-voltage applications.

The 1EDNx550 non-isolated gate driver ICs are available in small 6-pin SOT-23 and TSNP packages. Their truly differential inputs enable cost-effective solutions with exceptional power density. Unlike other gate driver ICs, the operation of the 1EDNx550-family is largely independent for the gate driver GND. Only the voltage difference between the two control inputs determines the status of the gate driver output. The 1EDNx550 family eliminates the risk of false triggering and is ideally suited for application designs prone to large GND shifts between the control IC and the gate driver IC, such as PFCs with Kelvin source MOSFETs.

1EDNx550x gate driver ICs have truly differential inputs. Their control signal inputs are largely independent from the ground potential. Only the voltage difference between its two input contacts determines its output being “on” or “off”. This prevents false triggering of power MOSFETs in a very elegant and robust way and thus eliminates electrical overstress (EOS) of the power MOSFETs. The products are available in a small 6-pin SOT package as well as in an ultrasmall TSNP package.

Gate driver ground shifts can be caused by the parasitic ground inductance between where the gate driver IC is placed and where the control IC resides. Applications, where the distance between these two ICs is relatively long, are prone to that. The need to use single- or dual-layer PCB material, as opposed to multi-layer PCBs, may be one root cause. Industrial design requirements or having the control IC on a daughter card can be another.

A second reason for the gate driver ground shift can be parasitic source inductances between the gate driver IC and the MOSFET driven by it. That’s particularly of relevance in hard-switching applications like PFCs and synchronous rectification stages.

The 1EDN family of truly diverse inputs can be used in a variety of applications, including boost PFCs with Kelvin source MOSFETs, interleaved PFCs, and full-bridge synchronous rectifiers. In addition, it can also be used for 48 V to 12 V intermediate bus converters, buck-boost converters, and half-bridges for low and medium-voltage applications.

Documents

To overcome ground-shift challenges in your design Infineon offers a single-channel non-isolated EiceDRIVER™ gate-driver ICs with truly differential inputs. Our expert explains the concept and gives an overview of demo boards.

This evaluation kit provides a test platform for Infineon's 1-channel low-side 4/8A gate driver ICs. 1EDN - the new reference in ruggedness and low power dissipation.

The 1EDN7550U is a non-isolated gate-driver IC and available in an ultrasmall TSNP package. It has truly differential control inputs, which enables cost-effective solutions with exceptional power density.

A PFC boost with 4 pin CoolMOS™ design uses a non-isolated MOSFET gate driver with truly differential inputs. The benefits compared to existing isolated gate driver solution can be clearly observed.