Overview

The EiceDRIVER™ 1EDBx275F is a family of single-channel isolated gate driver ICs, designed to drive Si, SiC, and GaN power switches. They can be used in various applications such as PFCs and LLCs in server and telecom, Vienna rectifiers in EV-charging stations, and multi-level PV string inverters. The 1EDBx275F are JEDEC-qualified for industrial applications.

Key features
  • 3 kVrms galvanic isolation
  • Low impedance
  • Separated source/sink outputs
  • Propagation delay accuracy +6/-4 ns
  • 300 V/ns CMTI
  • 4 V, 8 V, 12 V, & 15 V UVLO options
  • 20 ns output clamping speed
Applications
AC-DC power conversion for telecom infrastructure
Server power supply
Photovoltaic

Products

About

Single-channel gate-driver IC with input-to-output isolation

The 1EDB gate-driver family is available in 8-pin DSO packages. To ease application design tasks, the industry-standard pinout has separate source and sink output pins. Single-channel isolated gate-driver ICs solve PCB-layout problems in high-power factor controllers (PFC) and high-voltage DC-DC stages. Applications also include multi-level topologies and use cases with 557 Vrms working voltage (pollution class II). 

Fast-switching applications with high system-level efficiencies

With +6 / -4 ns propagation delay accuracy the EiceDRIVER™ 1EDB gate-driver family is optimized for fast-switching applications with high system-level efficiencies. To support functionally safe system operation, the common-mode transient immunity (CMTI) exceeds 300 V/ns. The typical output stage clamping speed is as short as 20 ns, and designers can choose between four different output-stages under-voltage lock-out (UVLO) variants (4 V, 8 V, 12 V, and 15 V).

High-voltage isolation and enhanced safety with 1EDB family

The EiceDRIVER™ 1EDB family is staffed with several features that support high-voltage isolation as well as enhanced safety, including low MOSFET switching losses, low dead time losses, and ground loop separation. In addition, the gate drivers have excellent immunity against switching noise, reduced risk of leaving the safe operation area (SOA), and shoot-through protection during boot-strapped half-bridge start-up.

Single-channel gate-driver IC with input-to-output isolation

The 1EDB gate-driver family is available in 8-pin DSO packages. To ease application design tasks, the industry-standard pinout has separate source and sink output pins. Single-channel isolated gate-driver ICs solve PCB-layout problems in high-power factor controllers (PFC) and high-voltage DC-DC stages. Applications also include multi-level topologies and use cases with 557 Vrms working voltage (pollution class II). 

Fast-switching applications with high system-level efficiencies

With +6 / -4 ns propagation delay accuracy the EiceDRIVER™ 1EDB gate-driver family is optimized for fast-switching applications with high system-level efficiencies. To support functionally safe system operation, the common-mode transient immunity (CMTI) exceeds 300 V/ns. The typical output stage clamping speed is as short as 20 ns, and designers can choose between four different output-stages under-voltage lock-out (UVLO) variants (4 V, 8 V, 12 V, and 15 V).

High-voltage isolation and enhanced safety with 1EDB family

The EiceDRIVER™ 1EDB family is staffed with several features that support high-voltage isolation as well as enhanced safety, including low MOSFET switching losses, low dead time losses, and ground loop separation. In addition, the gate drivers have excellent immunity against switching noise, reduced risk of leaving the safe operation area (SOA), and shoot-through protection during boot-strapped half-bridge start-up.

Documents

Documents

News & highlights

EiceDRIVER™ 1EDB family - Single-channel isolated gate driver ICs in DSO package

Our expert gives you an overview of the latest EiceDRIVER™ gate driver ICs. The 1EDB gate driver family comes in 8-pin DSO packages and optimized for fast-switching applications with high system-level efficiencies.

Gate driving solutions for SiC MOSFETs and GaN HEMTs including configurable isolated bias supply

Watch this video to find the latest solutions to drive high voltage SiC MOSFETs and GaN HEMTs using dedicated EiceDRIVER™ single-channel and dual-channel gate driver ICs as shown in the EVAL_2EDB_HB_GaN, KIT_1EDB_AUX_GaN, and KIT_1EDB_AUX_SiC demo boards. These small demo kits have a configurable isolated bias supply that allows to generate different positive and negative voltage levels with 1% voltage regulation and power levels up to 1.5 W. Speed up your design cycle and reduce time to market with these simple to use building blocks.

Gate Driver solutions for fast switching applications

In this webinar, we will visit a selected Gate Driver IC portfolio which shares a common set of strengths. One of the examples covered will address how commonly encountered challenges in applications like Boost PFCs with Kelvin-Source Power MOSFETs, Half-bridges in DC motor drives and buck-boost stage for battery-driven applications can be solved with a non-isolated Gate Driver IC with Truly Differential Inputs (TDI).