Overview

The EiceDRIVER™ 2EDi, dual-channel isolated product family of gate driver ICs, is designed for robust operation in high-performance CoolMOS™, CoolSiC™, and OptiMOS™ MOSFET half-bridges. The products are used in primary- and secondary-side controlled hard- and soft-switching topologies. They are pivotal to optimize power conversion efficiencies and to ensure a robust switched-mode power-supply operation under nominal and abnormal operation.

Key features
  • Fast power switching
  • 5A/9A source and sink currents
  • Propagation delay typ. 38 ns
  • Optimized for area and system BOM
  • Robust with CMTI >150 V/ns
  • Undervoltage lockout function
  • Output-to-output channel isolation
  • Input-to-output channel isolation
Applications
Telecom infrastructure
Datacenter and computing solutions
Power tools
EV charging
Low-voltage drives
Switched mode power supplies (SMPS)
Microinverter solutions

Products

About

Fast and reliable dual-channel isolated gate drivers: EiceDRIVER™ 2EDi

The 2EDi is a family of dual-channel isolated gate driver ICs designed to drive Si MOSFETs, SiC MOSFETs, and GaN power switches. Isolation is achieved by means of Infineon's coreless transformer (CT) technology which guarantees robust operation and industry benchmark common-mode rejection (CMTI). The high propagation delay accuracy and low channel-to-channel mismatch makes the product ideal for use in fast-switching power system. In addition, high CMTI, high reverse current capability and fast clamping of the output below UVLO guarantees reliable operation in the application.

Key benefits on 2EDi family

The 2EDi family offers a number of benefits including increased efficiency and reduced losses. Strong driving enables reduced switching losses and accurate timing, dead-time optimization, and synchronized driving of parallel MOSFETs. In addition, most of the driving power is dissipated externally, reducing the thermal load on the driver. This eliminates two costly protection diodes at the gate driver outputs, resulting in improved thermal behavior at a smaller form factor. The protection and safe operation of the 2EDi family is further enhanced by features such as reliable driver operation against fast switching transients. In addition, level shifting, and ground bounce immunity support regulatory safety are provided.

Robust operation with soft- and hard-switching topologies

1-channel and 2-channel galvanically isolated EiceDRIVER™ gate driver ICs are the best choices for optimal CoolSiC™ MOSFET 650 V operation. For use in CCM totem-pole PFC, functional isolation provides the required robustness against switching noise, and in secondary side-controlled LLC stages, reinforced isolation is indispensable. The UVLO_off threshold guarantees safe CoolSiC™ operation at current levels required by the applications. The industry-leading low output-stage impedance minimizes CoolSiC™ switching losses. The excellent + 6/- 4 ns propagation delay accuracy minimizes dead-time losses.

Fast and reliable dual-channel isolated gate drivers: EiceDRIVER™ 2EDi

The 2EDi is a family of dual-channel isolated gate driver ICs designed to drive Si MOSFETs, SiC MOSFETs, and GaN power switches. Isolation is achieved by means of Infineon's coreless transformer (CT) technology which guarantees robust operation and industry benchmark common-mode rejection (CMTI). The high propagation delay accuracy and low channel-to-channel mismatch makes the product ideal for use in fast-switching power system. In addition, high CMTI, high reverse current capability and fast clamping of the output below UVLO guarantees reliable operation in the application.

Key benefits on 2EDi family

The 2EDi family offers a number of benefits including increased efficiency and reduced losses. Strong driving enables reduced switching losses and accurate timing, dead-time optimization, and synchronized driving of parallel MOSFETs. In addition, most of the driving power is dissipated externally, reducing the thermal load on the driver. This eliminates two costly protection diodes at the gate driver outputs, resulting in improved thermal behavior at a smaller form factor. The protection and safe operation of the 2EDi family is further enhanced by features such as reliable driver operation against fast switching transients. In addition, level shifting, and ground bounce immunity support regulatory safety are provided.

Robust operation with soft- and hard-switching topologies

1-channel and 2-channel galvanically isolated EiceDRIVER™ gate driver ICs are the best choices for optimal CoolSiC™ MOSFET 650 V operation. For use in CCM totem-pole PFC, functional isolation provides the required robustness against switching noise, and in secondary side-controlled LLC stages, reinforced isolation is indispensable. The UVLO_off threshold guarantees safe CoolSiC™ operation at current levels required by the applications. The industry-leading low output-stage impedance minimizes CoolSiC™ switching losses. The excellent + 6/- 4 ns propagation delay accuracy minimizes dead-time losses.

Documents

Documents

News & highlights

Gate driving solutions for SiC MOSFETs and GaN HEMTs including configurable isolated bias supply

Watch this video to find the latest solutions to drive high voltage SiC MOSFETs and GaN HEMTs using dedicated EiceDRIVER™ single-channel and dual-channel gate driver ICs as shown in the EVAL_2EDB_HB_GaN, KIT_1EDB_AUX_GaN, and KIT_1EDB_AUX_SiC demo boards. These small demo kits have a configurable isolated bias supply that allows to generate different positive and negative voltage levels with 1% voltage regulation and power levels up to 1.5 W. Speed up your design cycle and reduce time to market with these simple to use building blocks.

Infineon’s unique dual-channel isolated gate driver ICs

Explore the new family of dual channel isolated driver ICs and how it helps to optimize your systems. These drivers are unique in two aspects in the industry: super precise timing behavior and ultra-low resistive output stages. Watch the video to learn more!

EiceDRIVER™ gate driver kit for MOSFETs - overview: 1EDN, 2EDN, 1EDN TDI, 2EDI

Infineon offers a wide range of different EiceDRIVER™gate drivers for MOSFETs. 1EDN 1-channel MOSFET gate driver ICs serve as the essential link connecting control ICs, powerful MOSFETs and GaN switching devices. There is also a 2EDN 2-channel MOSFET driver ICs available. In addition, the 1-channel non-isolated gate drivers with truly differential inputs called 1EDN TDI. Finally, the 2EDi, dual-channel isolated product family of gate driver ICs, designed for robust operation in high performance CoolMOS™, CoolSiC™ and OptiMOS™ MOSFET half-bridges.

Gate Driver solutions for fast switching applications

In this webinar, we will visit a selected Gate Driver IC portfolio which shares a common set of strengths. One of the examples covered will address how commonly encountered challenges in applications like Boost PFCs with Kelvin-Source Power MOSFETs, Half-bridges in DC motor drives and buck-boost stage for battery-driven applications can be solved with a non-isolated Gate Driver IC with Truly Differential Inputs (TDI).