IRHNJ6S7230SCS

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IRHNJ6S7230SCS
IRHNJ6S7230SCS

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    10 A
  • ID (@25°C) max
    16 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5
  • Polarity
    N
  • QG
    42 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    130 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The rad hard N-channel MOSFET IRHNJ6S7230SCS is a single device designed for space applications with improved immunity to SEE and LET up to 90MeV·cm2/mg. It has a voltage rating of 600V and can handle currents up to 3.4A, with SMD-0.5 package and electrical performance up to 100krad(Si) TID. This R6 MOSFET provides faster switching times and very low RDS(on) for efficient power usage in high-speed switching applications.

Applications

Documents

Design resources

Developer community

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