Active and preferred

IRFG5110

Data Sheet
package

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IRFG5110
IRFG5110
Data Sheet

Product details

  • Configuration
    Dual
  • ID (N-CH @100°C) max
    0.6 A
  • ID (N-CH @25°C) max
    1 A
  • ID (P-CH @100°C) max
    -0.6 A
  • ID (P-CH @25°C) max
    -1 A
  • Package
    MO-036AB
  • Polarity
    2N / 2P
  • RDS (on) (N-CH @25°C) max
    700 mΩ
  • RDS (on) (P-CH @25°C) max
    700 mΩ
  • VBRDSS min
    100 V
Recommended
OPN
IRFG5110EWSA1
Product Status active and preferred
Infineon Package
C-DIP-14
Package Name 14 Pin Dual SB - Quad
Packing Size 1
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-DIP-14
Package Name 14 Pin Dual SB - Quad
Packing Size 1
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The IRFG5110 is a 100V dual 2N & 2P-channel high reliability MOSFET in a R4 HEXFET technology MO-036AB package. It features low on-state resistance, high transconductance, and is ideal for high-reliability applications such as power supplies, motor controls, and audio amplifiers. The isolated package improves thermal efficiency and reduces drain.

Applications

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Documents

Design resources

Partner solutions

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