IPI180N10N3 G

Data Sheet

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IPI180N10N3 G
IPI180N10N3 G
Data Sheet

Product details

  • Budgetary Price €/1k
    0.6
  • Ciss
    1350 pF
  • Coss
    237 pF
  • ID (@25°C) max
    43 A
  • IDpuls max
    172 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    I2PAK (TO-262)
  • Polarity
    N
  • Ptot max
    71 W
  • QG (typ @10V)
    19 nC
  • RDS (on) (@10V) max
    18 mΩ
  • Rth
    2.1 K/W
  • VDS max
    100 V
  • VGS(th)
    2.7 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

Features

  • Excellent switching performance
  • World’s lowest RDS(on)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS(on) product (FOM)
  • RoHS compliant-halogen free
  • MSL1 rated 2

Benefits

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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