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IMZA120R030M1H

CoolSiC™ 1200 V, 30 mΩ SiC Trench MOSFET in TO-247-4 package
Data Sheet
package
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IMZA120R030M1H
IMZA120R030M1H
ea.
Data Sheet

Product details

  • Ciss
    2160 pF
  • Coss
    99 pF
  • ID (@25°C) max
    70 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-247-4
  • Pin Count
    4 Pins
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    273 W
  • Qgd
    15 nC
  • QG
    52 nC
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    30 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.55 K/W
  • Technology
    CoolSiC™ G1
  • Tj max
    175 °C
  • VDS max
    1200 V
Recommended
OPN
IMZA120R030M1HXKSA1
Product Status active
Infineon Package
PG-TO247-4
Package Name TO247 4-pin (asymmetric leads)
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-4
Package Name TO247 4-pin (asymmetric leads)
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Our SiC MOSFET in TO-247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.

Features

  • Best in class switching losses
  • Best in class conduction losses
  • Benchmark high threshold voltage
  • Vth > 4 V
0V turn-off gate voltage applicable
  • Wide gate-source voltage range
  • Robust diode for hard commutation
  • Temp. ind. turnoff switching losses
  • .XT interconnection technology

    • Documents

    Documents

    Design resources

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