FM24V05-GTR
Active and preferred
RoHS Compliant
Lead-free

FM24V05-GTR

Datasheet
package

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FM24V05-GTR
FM24V05-GTR
Datasheet


Product details

  • Density
    512 kBit
  • Frequency
    3.4 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Operating Voltage range
    2 V to 3.6 V
  • Organization (X x Y)
    64Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns

Recommended
OPN
FM24V05-GTR
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Est. Longevity Date 2033
Launch Date 03/2022
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Est. Longevity Date 2033
Launch Date 03/2022
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
The FM24V05-GTR is a 512-Kbit serial ferroelectric random access memory (F-RAM) with an industry-standard I2C interface, supporting 100 trillion (10^14) read/write cycles and NoDelay™ writes at bus speed. It ensures 151-year data retention at 65°C, operates from 2.0 V to 3.6 V, and features low power consumption: 175 μA active at 100 kHz, 90 μA standby, and 5 μA sleep mode. Housed in an 8-pin SOIC package, it operates reliably from –40°C to +85°C.

Features

  • 512-Kbit nonvolatile F-RAM
  • 100 trillion (10¹⁴) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ instant writes
  • Up to 3.4 MHz I2C interface
  • Direct hardware replacement for I2C EEPROM
  • Supports 100 kHz, 400 kHz, 3.4 MHz I2C
  • Low power: 175 μA active, 90 μA standby, 5 μA
  • VDD operation: 2.0 V to 3.6 V
  • Industrial temperature: –40°C to +85°C
  • Device ID with Manufacturer and Product ID
  • Write protect pin for full memory map

Benefits

  • Reliable data even after power loss
  • Enables frequent, rapid data logging
  • Eliminates write delays and polling
  • Drop-in replacement for legacy EEPROM
  • Reduces system power consumption
  • Supports fast and legacy I2C speeds
  • Simplifies qualification across temp range
  • No wear-out issues like EEPROM/Flash
  • Easy device identification in system
  • Protects critical data from accidental writes
  • Lowers system design complexity
  • Suitable for harsh industrial environments

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