CY7C1444KV33-250AXC
Active and preferred
RoHS Compliant
Lead-free

CY7C1444KV33-250AXC

package

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CY7C1444KV33-250AXC
CY7C1444KV33-250AXC

Product details

  • Architecture
    Standard Sync, Pipeline DCD
  • Bank Switching
    N
  • Data Width
    x 36
  • Density
    36 MBit
  • ECC
    N
  • Family
    Standard Sync
  • Frequency
    250 MHz
  • Interfaces
    Parallel
  • Lead Ball Finish
    Ni/Pd/Au
  • On-Die Termination
    N
  • Operating Temperature range
    0 °C to 70 °C
  • Operating Voltage range
    3.14 V to 3.63 V
  • Organization (X x Y)
    1Mb x 36
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2031
  • Qualification
    Commercial
  • Read Latency (Cycles)
    1
Recommended
OPN
CY7C1444KV33-250AXC
Product Status active and preferred
Infineon Package
PG-TQFP-100
Package Name TQFP-100 (51-85050)
Packing Size 144
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TQFP-100
Package Name TQFP-100 (51-85050)
Packing Size 144
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY7C1444KV33-250AXC is a 36-Mbit (1M × 36) pipelined synchronous SRAM with registered inputs/outputs for 250 MHz bus operation and 2.5 ns clock-to-output. It runs from a 3.135 V to 3.6 V core (VDD) with 2.5 V or 3.3 V I/O (VDDQ), supports interleaved or linear burst sequences, byte writes plus global write, and provides ZZ sleep and double-cycle deselect to enable depth expansion without wait states.

Features

  • Bus operation up to 250 MHz
  • 36-Mbit Sync SRAM, pipelined I/O
  • 2.5 ns clock-to-output (tCO)
  • 3.135 V to 3.6 V core supply (VDD)
  • 2.375 V–2.625 V or 3.135 V I/O
  • Self-timed synchronous writes
  • Byte writes plus global write (GW)
  • Burst counter: linear or interleaved
  • Double-cycle deselect, no wait state
  • ZZ sleep mode, IDDZZ 75 mA max

Benefits

  • Supports 250 MHz high-throughput buses
  • Pipelining sustains burst bandwidth
  • 2.5 ns tCO cuts read data latency
  • 3.3 V cores simplify power design
  • 2.5/3.3 V I/O eases interfacing
  • Self-timed writes simplify timing
  • Byte write lowers write bandwidth
  • Burst modes fit CPU/DSP access
  • Depth expansion without slowdowns
  • Sleep mode reduces idle power draw

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