CY7C1062GE30-10BGXIT
Active and preferred
RoHS Compliant
Lead-free

CY7C1062GE30-10BGXIT

Data Sheet
package

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CY7C1062GE30-10BGXIT
CY7C1062GE30-10BGXIT
Data Sheet

Product details

  • Density
    16 MBit
  • Family
    FAST SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.2 V to 3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    512K x 32
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    10 ns
Recommended
OPN
CY7C1062GE30-10BGXIT
Product Status active and preferred
Infineon Package
PG-BGA-119
Package Name BGA-119 (51-85115)
Packing Size 500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-BGA-119
Package Name BGA-119 (51-85115)
Packing Size 500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY7C1062GE30-10BGXIT is a 16-Mbit (512 K × 32) asynchronous SRAM with embedded ECC for single-bit error correction and an ERR output to flag detected/corrected errors. The 10 ns speed grade supports 2.2 V to 3.6 V operation over -40°C to +85°C. Three chip enables, byte enables for 32-bit writes, and automatic power-down when deselected simplify high-reliability memory expansion designs.

Features

  • 16-Mbit SRAM (512K x 32)
  • Embedded ECC for single-bit fix
  • ERR output flags 1-bit ECC event
  • Address access time tAA 10 ns/15 ns
  • 4 byte enables (BA, BB, BC, BD)
  • 3 chip enables for expansion (CE1-3)
  • Automatic power-down on deselect
  • High-Z outputs when disabled
  • TTL-compatible I/O levels
  • VCC: 1.65-2.2 V or 2.2-3.6 V
  • Data retention at VDR = 1.0 V
  • ESD (HBM) > 2001 V

Benefits

  • Fits 32-bit data paths directly
  • ECC improves data integrity
  • ERR pin speeds fault handling
  • 10 ns/15 ns enables fast access
  • Byte writes cut bus bandwidth
  • 3 enables simplify bank expansion
  • Auto power-down reduces standby
  • High-Z eases bus sharing
  • TTL I/O eases logic interfacing
  • Works across common supply rails
  • 1.0 V retention saves battery
  • >2001 V ESD improves robustness

Applications

Documents

Design resources

Partner solutions

Developer community

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