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AN217979 Endurance and Data Retention Characterization of Infineon Flash Memory

Nonvolatile flash memory technology is subject to physical degradation that can eventually lead to device failure. Vendors use two end-of-life parameters to specify the performance of reprogrammable nonvolatile memory: Program/Erase endurance and data retention. Understanding the practical meaning of these parameters and their inter-relationship allows a designer to properly assess the capabilities in order to meet the system performance and reliability requirements. This application note provides a perspective on nonvolatile flash memory reliability testing methodology and discusses the influence of key factors in terms of Program/Erase endurance and data retention. It also provides information on reliable usage models using Infineon products related to industry standards.

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Apr 29, 2021