Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
BFP740ESD
END OF LIFE
discontinued
RoHS Compliant
Lead-free

BFP740ESD

END OF LIFE

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BFP740ESD
BFP740ESD

Product details

  • fT
    45 GHz
  • Gmax
    29 dB @900 MHz
  • IC max
    45 mA
  • NFmin
    0.55 dB @900 MHz
  • OIP3
    25 dBm
  • OP1dB
    10 dBm
  • Package
    SOT343
  • Ptot
    160 mW
  • VCEO max
    4.2 V
OPN
BFP740ESDH6327XTSA1
Product Status discontinued
Infineon Package
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Features

  • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,  2 kV ESD robustness (HBM) due to integrated protection circuits
  • NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3V, 6 mA
  • High gain Gms = 25.5 dB at 2.4 GHz and Gma = 18.5 dB at 5.5 GHz, 3V, 25 mA
  • OIP3 = 24 dBm at 5.5 GHz, 3V, 25 mA
 

Applications

Documents

Design resources

Developer community