The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).
Summary of Features:
- Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits
- NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3V, 6 mA
- High gain Gms = 25.5 dB at 2.4 GHz and Gma = 18.5 dB at 5.5 GHz, 3V, 25 mA
- OIP3 = 24 dBm at 5.5 GHz, 3V, 25 mA
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB
- Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
- Multimedia applications such as portable TV, CATV, FM Radio
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
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