950 V CoolMOS™ P7

Perfect fit for PFC and flyback topologies

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Overview

The latest 950 V CoolMOS™ P7 technology from Infineon focuses on the low-power SMPS market, for applications ranging from lighting, smart meter, mobile phone charger, notebook adapter, to AUX power supply and industrial SMPS. P7 has best-in-class VGS(th) of 3 V and a tolerance of only ±0.5 V, protected gate, and broad portfolio.

Key Features

  • ESD gate protection to Class2 (HBM)
  • Best-in-class FOM RDS(on)*Eoss
  • Smallest-in-class Qg, Ciss and Coss
  • Tightest VGS(th) variation (±0.5 V)
  • Smallest RDS(on)=450 mΩ in DPAK

Products

About

Robust high-voltage MOSFET

The 950 V CoolMOS™ P7 series was developed with low-power applications in mind. The large operational voltage allows for robust response to energetic surge events - as in weak power lines in lighting and smart meter applications. A notable ESD robustness enhancement is also added though the implemented Zener gate protection.

Efficient high-voltage operation with ease

CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ±0.5 V, which makes it easy to drive and design-in. The  elevated threshold voltage guaranteed through a tight process control enables wide supply range of the gate driver/controller circuit combined with robust noise-immune commutation.

Broad portfolio facilitates design-ins

With a large packaging set and on-state resistance range the P7 facilitates a broad range of applications for an ease of design-in. The SMD packages (SOT223, DPAK) are tuned for high-density converters with fast switching. An isolated TO220 FullPAK version caters to low assembly cost converters by simplifying the isolation arrangements, while an IPAK version covers the assemblies where isolation is treated otherwise. The RDS(on) portfolio ranges from 0.45 ohm to 3.7 ohm facilitating the cost-loss design optimization.

Robust high-voltage MOSFET

The 950 V CoolMOS™ P7 series was developed with low-power applications in mind. The large operational voltage allows for robust response to energetic surge events - as in weak power lines in lighting and smart meter applications. A notable ESD robustness enhancement is also added though the implemented Zener gate protection.

Efficient high-voltage operation with ease

CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ±0.5 V, which makes it easy to drive and design-in. The  elevated threshold voltage guaranteed through a tight process control enables wide supply range of the gate driver/controller circuit combined with robust noise-immune commutation.

Broad portfolio facilitates design-ins

With a large packaging set and on-state resistance range the P7 facilitates a broad range of applications for an ease of design-in. The SMD packages (SOT223, DPAK) are tuned for high-density converters with fast switching. An isolated TO220 FullPAK version caters to low assembly cost converters by simplifying the isolation arrangements, while an IPAK version covers the assemblies where isolation is treated otherwise. The RDS(on) portfolio ranges from 0.45 ohm to 3.7 ohm facilitating the cost-loss design optimization.

Documents

Documents

Design resources

Developer community

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