GS-065-150-1-D2 650 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
Overview
The GS-065-150-1-D2 is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency. The GS-065-150-1-D2 is a high performing GaN die designed for use in power modules for high power applications such as on-board and off-board EV chargers, traction drive, industrial power supplies and renewable energy systems.
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Summary of Features
- E-mode HEMT – normally OFF
- Ultrafast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Zero reverse recovery loss
- Fast, controllable fall and rise times
- RoHS 3(6+4) compliant
Benefits
- Improves system efficiency
- Improves power density
- Reduces system weight
- Enables higher operating frequency
- System cost reduction savings
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