CoolSiC™ Schottky Diodes 650 V G5 and G6
High efficiency and price performance
Infineon's CoolSiC™ Schottky diodes 650 V deliver high price-performance, leveraging advanced silicon carbide production facilities, a solid track record, the upmost quality and a very granular product portfolio.
With more compact designs and thin wafer technology, the CoolSiC™ Schottky diodes generation 5 and 6 complement our 650 V CoolMOS™ superjunction MOSFET families, satisfying application requirements of 650 V solutions. The CoolSiC™ Schottky diodes G5 and G6 convince with better efficiency compared to Silicon diode alternatives.
The latest product family of CoolSiC™ Schottky diodes 650 V G6, successor of generation 5, comes with improved system efficiency complementing Infineon’s 600 V and 650 V CoolMOS™ 7 superjunction MOSFET families.
The CoolSiC™ Schottky diode 650 V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Qc x VF). The CoolSiC™ G6 diodes complement Infineon’s 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
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The latest most price-performance generation of Infineon CoolSiC™ Schottky diode 650V G6 offers the best efficiency per dollar.
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