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IRHF67130

Data Sheet
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IRHF67130
IRHF67130
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    12 A
  • ID (@25°C) max
    12 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-205AF
  • Polarity
    N
  • QG
    54 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    65 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHF67130 R6 N-channel MOSFET is a radiation-hardened device for space applications. With 100V and 12A rating, it provides high performance and low RDS(on) and gate charge. It is electrically stable up to 100krad(Si) TID and has COTS classification, making it ideal for DC-DC converters and motor controllers. LET of 90 MeV·cm2/mg provides high performance for Single Event Effects.

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