CYEL15B102N-ZS60XM Radiation tolerant, highly reliable, small footprint, 2Mb non-volatile Ferroelectric RAM (F-RAM) for NewSpace
Overview
Our radiation tolerant, parallel interface, SPI Ferroelectric RAM (F-RAM) is one of the industry’s lowest power, non-volatile memory solutions that is guaranteed to 50 Krad (Si) TID and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliaibility for NewSpace applications.
Summary of Features
- 2 Mb density
- 128K x 16, parallel interface
- 60ns access time
- Infineon instant non-volatile write technology
- 10-trillon read/write cycle endurance
- 120 years data retention at +85°C
- Extremely low programming voltage (2V)
- 2.0 V–3.6 V operating voltage range
- Low operating current (10 mA max)
- –55°C to +125°C military temperature grade
- 44-pin TSOP package
Benefits
- AEC-Q006 compliant
- ROHS compliant
- 50 Krad (Si) TID radiation performance
- Single Lot Date Code (SLDC)
- 100% electrical testing coverage
- Certificate of Conformance (CoC)
Potential Applications
- Data logging for calibration data for satellites
- Data storage for sensors and instruments
- Stand-alone boot code or embedded boot code storage for microcontrollers for cube sat payloads
- Secure key storage for data encryption
- Replacement for NOR flash and EEPROMs
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