EiceDRIVER™ isolated gate driver ICs for EV

What is Infineon’s  EiceDRIVER™ isolated gate driver ICs family

This family of high-voltage gate drivers for EV includes automotive qualified IGBT and SiC MOSFET driver ICs, providing galvanic isolation and bidirectional signal transmission with high ambient temperature capability. They enable extremely short propagation delays keeping the designer’s flexibilities at the highest level while providing galvanic isolation using Infineon's robust coreless transformer (CT) technology. They support IGBT and SiC technologies up to 1200 V. Advanced monitoring and protection features facilitate the implementation of ISO 26262 functional safety requirements and provides stable operation in harsh EMC environments.

The products are based on a RoHS conformant and robust package solution specially developed to meet automotive requirements. This results in 260°C peak reflow temperatures while still passing full AEC-Q100 qualification. With our zero-defect philosophy, our market-leading products exceed AEC-Q100 automotive quality standards.

Very compact package solutions & high level of feature integration reduces the number of external components to simplify the board layout, minimize system cost and shrink the PCB space needed.

Infineon’s 3rd generation of high voltage gate driver ICs for EV 

EiceDRIVER™ 1EDI302xAS, 1EDI303xAS and 1EDI305xAS product families consist of automotive qualified, pin-compatible product variants which are optimized for IGBTs and SiC MOSFETs. The pin compatibility makes it easy to switch between variants based on customer needs (ADC for temperature measurement, ADC for DC link measurement, and active short-circuit), and swiftly adjust ECUs to different application needs.

Infineon's highly robust and proven coreless transformer (CT) technology is used to provide bidirectional signal transfer across galvanic isolation.

Comprehensive safety features and ISO 26262-compliance significantly facilitate functional safety implementation at the system level for up to ASIL D. Furthermore, Infineon offers with the compact 20-pin package variants, the leanest and powerful ISO 26262-compliant gate drivers in the market.

Infineon offers isolated gate driver ICs optimized for SiC technologies

SiC power technologies such as Infineon’s CoolSiC™ when used in EV applications like traction inverters increase the driving range of (hybrid) electric vehicles and reduce energy losses during charging. Infineon’s EiceDRIVER™ isolated gate driver ICs are the perfect fit for SiC MOSFETS and necessary to utilize the full performance of SiC power switches.

In the EiceDRIVER ™ isolated gate driver ICs for EV portfolio 1EDI303xAS and 1ED305xAS variants are optimized for SiC. They incorporate the key features and parameters to drive SiC MOSFETs such as an enhanced switching behavior (extended CMTI capability, fast propagation delay, switching frequency), wide output-side supply range, short internal dead time, and DESAT/OCP threshold level adaptation.

Infineon's support to achieve faster time to market development

Infineon’s EiceDRIVER™ isolated gate driver ICs for EV products come with various design-in support materials. On the respective product page you will find application notes, evaluation boards with user guide and easy handling GUI to kick start the design activities as well as online video trainings.

For further information such as free safety documentation (safety manual, safety analysis report, etc.) you can get access to Infineon’s information exchange platform myICP. Please register to myInfineon, and contact your Infineon sales representative to get a promoted user and access to myICP.