P-channel rad hard power MOSFETs

High-performance IR HiRel solutions provide efficient DLA-qualified power management from -30 V to -200 V for space applications

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Overview

Infineon's IR HiRel P-channel rad hard MOSFETs are screened to MIL-PRF-19500, with QPL-qualified options available. They are available in a variety of hermetic packages. The latest-generation superjunction R9 rad hard P-channel MOSFETs set a new benchmark for robust safe operating area (SOA) performance, expanding the envelope for DC SOA.

Key Features

  • Single-event effect (SEE) hardened
  • Improved SOA
  • Low RDS(on)
  • Simple drive requirements

Products

About

Rad hard P-channel MOSFET space applications

Infineon's award winning rad hard P-channel MOSFETs are ideal for space power applications with an operating life beyond 15 years such as:

  • Space DC-DC converters
  • Motor drives
  • Inrush current protection
  • Solid-state power controllers
  • Thermal management
  • Active OR-ing circuits
  • Redundant power distribution
  • Load switching
  • Battery charging
  • Battery management systems
DLA quality conformance testing of IR HiRel-branded rad hard FETs

HiRel products, unlike standard commercial ones, must undergo quality conformance testing at various levels to ensure product performance to specifications in the rugged conditions typical in space and defense applications. 

In the United States, the Defense Logistics Agency (DLA) is the controlling agency and has issued specifications that govern the quality conformance testing sequence performed on semiconductor devices and hybrid modules, namely MIL-PRF-19500/MIL-STD-750, MIL-PRF-38534/MIL-STD-883, and MIL-PRF-38535/MIL-STD-883.

MIL-PRF-19500/MIL-STD-750 are the controlling specifications for discrete semiconductors such as diodes and power MOSFETs. MIL-PRF-19500 directs discrete semiconductors to be manufactured to either JAN, JANTX, JANTXV, or JANS levels (Note: The JAN level is not allowed for MOSFETs).

MIL-PRF-19500
Simplified PMAD design with rad hard P-channel MOSFETs

Typical satellite architectures require a mix of power FETs, divided approximately 60% and 40% between N-channel and P-channel, respectively. With their improved SOA capabilities, latest generation rad hard P-channel FETs deliver higher current capability and support for higher output power in applications such as load sequencing, load switching, inrush current limiting and power source, and load redundancy. System designers can now opt for smaller packages and device paralleling, saving board space and weight.

Simpler design, higher reliability with R9
Radiation hardness assurance of Infineon rad hard MOSFETs

Infineon’s rad hard MOSFETs are tested to verify their radiation hardness capability with an assurance program based on the requirements outlined in ESCC-5000, MIL-PRF-19500, and associated slash sheets. Our IR HiRel-branded products exceed the standard requirements with a sampling size up to two times greater than is required for every manufacturing lot. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparison. Radiation hardened by design techniques virtually eliminate the possibility of single-event gate rupture (SEGR) and single-event burnout (SEB) in the rad hard power MOSFETs. Robust performance is then verified through extensive SEE testing.

Radiation test methodology - Power MOSFETs

Rad hard P-channel MOSFET space applications

Infineon's award winning rad hard P-channel MOSFETs are ideal for space power applications with an operating life beyond 15 years such as:

  • Space DC-DC converters
  • Motor drives
  • Inrush current protection
  • Solid-state power controllers
  • Thermal management
  • Active OR-ing circuits
  • Redundant power distribution
  • Load switching
  • Battery charging
  • Battery management systems

DLA quality conformance testing of IR HiRel-branded rad hard FETs

HiRel products, unlike standard commercial ones, must undergo quality conformance testing at various levels to ensure product performance to specifications in the rugged conditions typical in space and defense applications. 

In the United States, the Defense Logistics Agency (DLA) is the controlling agency and has issued specifications that govern the quality conformance testing sequence performed on semiconductor devices and hybrid modules, namely MIL-PRF-19500/MIL-STD-750, MIL-PRF-38534/MIL-STD-883, and MIL-PRF-38535/MIL-STD-883.

MIL-PRF-19500/MIL-STD-750 are the controlling specifications for discrete semiconductors such as diodes and power MOSFETs. MIL-PRF-19500 directs discrete semiconductors to be manufactured to either JAN, JANTX, JANTXV, or JANS levels (Note: The JAN level is not allowed for MOSFETs).

MIL-PRF-19500

Simplified PMAD design with rad hard P-channel MOSFETs

Typical satellite architectures require a mix of power FETs, divided approximately 60% and 40% between N-channel and P-channel, respectively. With their improved SOA capabilities, latest generation rad hard P-channel FETs deliver higher current capability and support for higher output power in applications such as load sequencing, load switching, inrush current limiting and power source, and load redundancy. System designers can now opt for smaller packages and device paralleling, saving board space and weight.

Simpler design, higher reliability with R9

Radiation hardness assurance of Infineon rad hard MOSFETs

Infineon’s rad hard MOSFETs are tested to verify their radiation hardness capability with an assurance program based on the requirements outlined in ESCC-5000, MIL-PRF-19500, and associated slash sheets. Our IR HiRel-branded products exceed the standard requirements with a sampling size up to two times greater than is required for every manufacturing lot. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparison. Radiation hardened by design techniques virtually eliminate the possibility of single-event gate rupture (SEGR) and single-event burnout (SEB) in the rad hard power MOSFETs. Robust performance is then verified through extensive SEE testing.

Radiation test methodology - Power MOSFETs

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