Active and preferred
RoHS Compliant
Lead-free

S25FL256LAGMFM000

Data Sheet
package
software
ea.
in stock

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S25FL256LAGMFM000
S25FL256LAGMFM000
ea.
Data Sheet

Product details

  • Density
    256 MBit
  • Family
    FL-L
  • Interface Bandwidth
    66 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 125 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2032
  • Qualification
    Automotive
Recommended
OPN
S25FL256LAGMFM000
Product Status active and preferred
Infineon Package
PG-DSO-16
Package Name SOIC-16 (002-15547)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-16
Package Name SOIC-16 (002-15547)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S25FL256LAGMFM000 is a 256 Mb (32 MB) FL-L series NOR flash memory with high-speed SPI multi-I/O interface supporting single, dual, and quad I/O plus DDR read modes. Operating from 2.7 V to 3.6 V, it delivers up to 66 MBps quad read speed and uniform 4 KB, 32 KB, and 64 KB erase options. Designed for industrial and automotive applications, it meets AEC-Q100 grades. With 100,000 program/erase cycles and 20-year data retention, it is ideal for embedded systems.

Features

  • SPI with single, dual, quad I/O
  • Double data rate (DDR) read support
  • 256-byte page programming buffer
  • Uniform 4 KB sector erase
  • 100,000 program/erase cycles min
  • 20 year data retention min
  • Security regions with OTP lock bits
  • Deep Power Down mode
  • 2.7 V to 3.6 V single supply
  • –40°C to +125°C operating temp
  • Serial flash discoverable parameters (SFDP)
  • Program/erase suspend and resume

Benefits

  • Flexible interface for various host MCUs
  • DDR read boosts data throughput
  • Fast programming with large buffer
  • Easy sector/block/chip erase options
  • Reliable for frequent data updates
  • Long-term data storage security
  • Protects sensitive data from tampering
  • Prevents accidental writes/erases
  • Compatible with 3 V systems
  • Operates in harsh environments
  • Easy configuration and compatibility
  • No interruption during critical operations

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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