Active and preferred
RoHS Compliant
Lead-free

IPQC60T010S7

600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor in Q-DPAK BSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy
Data Sheet
package
ea.
in stock

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IPQC60T010S7
IPQC60T010S7
ea.
Data Sheet

Product details

  • IDpuls max
    796 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    Q-DPAK bottom-side cooled
  • Polarity
    N
  • QG
    318 nC
  • RDS (on) (@ Tj = 25°C)
    9 mΩ
  • Special Features
    Slow switching
  • VDS max
    600 V
  • VGS(th)
    4 V
Recommended
OPN
IPQC60T010S7XTMA1
Product Status active and preferred
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK bottom-side cooled
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK bottom-side cooled
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolMOS™ S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS.The temperature sensor enhances CoolMOS™ S7 features, allowing the best possible utilization of the power transistor.

Features

  • Optimized price performance
  • Tailored for low-frequency switching
  • Reduced parasitic source inductance
  • Seamless diagnostics
  • Accurate and fast monitoring over time
  • High current capability
  • Enhanced protection
  • Optimized thermal device utilization
  • Cutting-edge top-side-cooled package

Benefits

  • Minimized conduction losses
  • Increased system performances
  • Allow more compact design over EMR
  • Lower TCO over prolonged time
  • Enabling higher power density designs
  • Reduction of external sensing elements
  • Best utilization of power transistor
  • 40% more accurate than discrete sensor
  • 4x faster than discrete sensor solution
  • Optimal PCB space utilization
  • Enabling functional safety
  • Best-in-class thermal dissipation

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }