Active and preferred
RoHS Compliant
Lead-free

IPDQ60T017S7A

600 V CoolMOS™ S7TA SJ MOSFET with integrated temperature sensor in Q-DPAK TSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy
Data Sheet
package
ea.
in stock

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IPDQ60T017S7A
IPDQ60T017S7A
ea.
Data Sheet

Product details

  • ID (@25°C) max
    113 A
  • IDpuls max
    488 A
  • Mounting
    SMT
  • Package
    Q-DPAK
  • Polarity
    N
  • QG
    196 nC
  • Qualification
    Automotive
  • RDS (on) (@ Tj = 25°C)
    15 mΩ
  • Special Features
    Slow switching
  • Technology
    CoolMOS™ S7TA
  • VDS max
    600 V
  • VGS(th)
    4 V
Recommended
OPN
IPDQ60T017S7AXTMA1
Product Status active and preferred
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolMOS™ S7TA with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation and functional safety. The device is optimized for low-frequency and high-current switching applications.It is an ideal fit for solid-state relay, Battery Disconnect, and eFuses. The temperature sensor enhances CoolMOS™ S7A features, allowing the best possible utilization of the power transistor.

Features

  • Optimized price performance
  • Tailored for low-frequency switching 
  • Reduced parasitic source inductance
  • Seamless diagnostics
  • Accurate and fast monitoring over time
  • High current capability
  • Enhanced protection
  • Optimized thermal device utilization
  • Cutting-edge top-side-cooled package

Benefits

  • Minimized conduction losses
  • Increased system performances
  • Allowing more compact design over EMR
  • Lower TCO over prolonged time
  • Enabling higher power density designs
  • Reduction of external sensing elements
  • Best utilization of power transistor
  • 40% more accurate than discrete sensor
  • 4x faster than discrete sensor solution
  • Optimal PCB space utilization
  • Enabling functional safety
  • Best-in-class thermal dissipation

Documents

Documents

Design resources

Partner solutions

Developer community

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