Active and preferred
RoHS Compliant
Lead-free

CY8C4127LCE-HV403

Automotive 1200V Silicon-carbide (SiC) Power MOSFET in D2PAK-7L, 8.7mΩ
Data Sheet
package
ea.
in stock

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CY8C4127LCE-HV403
CY8C4127LCE-HV403
ea.
Data Sheet

Product details

  • 16-20 bit Precision ΔΣ ADC
    2
  • AECQ available
    Yes
  • CAN-FD
    No
  • Classification
    ISO 26262-compliant
  • Code Flash with ECC
    128 kByte
  • CRYPTO
    No
  • Data Flash with ECC
    8 kByte
  • Digital Channels
    4
  • Family
    PSOC™ 4 HVPA-144K
  • GPIOs
    9
  • High Voltage measurement accuracy (with HV divider)
    0.25 %
  • High Voltage measurement Ios (with HV divider)
    2
  • High Voltage Subsystem (LDO, LIN PHY)
    Yes
  • iso-UART
    No
  • LIN Controller
    Yes
  • LIN
    1
  • Packaging
    Tray
  • SCB Blocks
    1
  • SRAM with ECC
    8 kByte
  • Target Application
    IBS
  • TCPWM Blocks
    4
  • Temperature
    - 40°C - + 125°C
  • Voltage measurement accuracy
    0.25 %
Recommended
OPN
CY8C4127LCE-HV403
Product Status active and preferred
Infineon Package
PG-VQFN-32
Package Name QFN-32 (002-29344)
Packing Size 980
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-VQFN-32
Package Name QFN-32 (002-29344)
Packing Size 980
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Features

  • Revolutionary semiconductor material - Silicon Carbide
  • Very low switching losses
  • Threshold-free on state characteristic
  • 0V turn-off gate voltage
  • Benchmark gate threshold voltage, VGS(th)=4.5V
  • Fully controllable dv/dt
  • Commutation robust body diode, ready for synchronous rectification
  • Temperature independent turn-off switching losses
  • Sense pin for optimized switching performance
  • Suitable for HV creepage requirements
  • XT interconnection technology for best-in-class thermal performance

Benefits

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

Applications

Automotive BMS

Documents

Documents

Design resources

Partner solutions

Developer community

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