Active and preferred
RoHS Compliant
Lead-free

BFR840L3RHESD

Data Sheet
package

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BFR840L3RHESD
BFR840L3RHESD
Data Sheet

Product details

  • fT
    75 GHz
  • Gmax
    26.50 dB @900 MHz
  • IC max
    35 mA
  • NFmin
    0.55 dB @900 MHz
  • OIP3
    17 dBm
  • OP1dB
    4 dBm
  • Ptot
    75 mW
  • VCEO max
    2.25 V
Recommended
OPN
BFR840L3RHESDE6327XTSA1
Product Status active and preferred
Infineon Package
TSLP-3-9
Package Name N/A
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
TSLP-3-9
Package Name -
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.

Features

  • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness
  • High transition frequency fT = 75 GHz to enable best in class noise performance at high frequencies: Nfmin = 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 10 mA
  • High gain Gms = 22 dB at 5.5 GHz, 1.8 V, 10 mA
  • OIP3 = 18 dBm at 5.5 GHz, 1.8 V, 10 mA
  • Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor)
  • Low profile and small form factor leadless package

Applications

Documents

Documents

Design resources

Partner solutions

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