Active and preferred
RoHS Compliant
Lead-free

BFP840ESD

Data Sheet
package

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BFP840ESD
BFP840ESD
Data Sheet

Product details

  • fT
    80 GHz
  • Gmax
    27 dB @900 MHz
  • IC max
    35 mA
  • NFmin
    0.60 dB @900 MHz
  • OIP3
    21 dBm
  • OP1dB
    4.5 dBm
  • Ptot
    75 mW
  • VCEO max
    2.25 V
Recommended
OPN
BFP840ESDH6327XTSA1
Product Status active and preferred
Infineon Package
SOT343
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
SOT343
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BFP840ESD is a discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band.

Features

  • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness
  • High transition frequency fT = 80 GHz to enable  low noise figure at high frequencies: e.g. Nfmin = 0.85 dB at 5.5 GHz, 1.8 V, 6 mA
  • High gain Gms = 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
  • OIP3 = 22 dBm at 5.5 GHz, 1.8 V, 10 mA
  • Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor)

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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