Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
END OF LIFE
discontinued
RoHS Compliant
Lead-free

BFP640FESD

END OF LIFE
Data Sheet
package
board

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

BFP640FESD
BFP640FESD
Data Sheet

Product details

  • fT
    46 GHz
  • Gmax
    29.50 dB @900 MHz
  • IC max
    50 mA
  • NFmin
    0.55 dB @900 MHz
  • OIP3
    26 dBm
  • OP1dB
    11.5 dBm
  • Package
    TSFP-4
  • Ptot
    200 mW
  • VCEO max
    4.1 V
OPN
BFP640FESDH6327XTSA1
Product Status discontinued
Infineon Package
TSFP-4-1
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
TSFP-4-1
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BFP640FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic thin small flat 4-pin dual emitter package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.

Features

  • Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
  • 2 kV ESD robustness (HBM) due to integrated protection circuits
  • High maximum RF input power of 21 dBm
  • 0.6 dB minimum noise figure typical at 1.5 GHz, 0.65 dB at 2.4 GHz, 6 mA
  • 28.5 dB maximum gain Gms typical at 1.5 GHz, 25 dB at 2.4 GHz, 30 mA
  • 26 dBm OIP3 typical at 2.4 GHz, 30 mA
  • Accurate SPICE GP model available to enable effective design in process (see chapter 6)
  • Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }