not for new design
RoHS Compliant
Lead-free

BFP196WN

ea.
in stock

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BFP196WN
BFP196WN
ea.

Product details

  • Gmax
    17 dB @900 MHz
  • IC max
    150 mA
  • NFmin
    1.10 dB @900 MHz
  • OIP3
    32 dBm @900 MHz
  • OP1dB
    19 dBm @900 MHz
  • Package
    SOT343
  • VCEO max
    12 V
OPN
BFP196WNH6327XTSA1
Product Status not for new design
Infineon Package
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status not for new design
Infineon Package
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability.

Features

  • For high voltage applications VCE < 12 V
  • Maximal power Ptot = 700 mW
  • Transition frequency fT = 7.5 GHz
  • Noise figure NFmin = 1.3 dB at 900 MHz
  • Easy to use Pb-free (RoHS compliant) and halogen-free industry
  • Standard SOT343 package with visible leads

Applications

Documents

Design resources

Developer community

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