Summary of Features:
- High gain ultra low noise RF transistor
- Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more
- Ideal for CDMA and WLAN applications
- Outstanding noise figure F = 0.5 dB at 1.8 GHz,Outstanding noise figure F = 0.85 dB at 6 GHz
- High maximum stable gain :Gms = 27 dB at 1.8 GHz,
- Gold metallization for extra high reliability
- 150 GHz fT-Silicon Germanium technology
- Pb-free (RoHS compliant) package1)
- Qualified according AEC Q101
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